IP Library › Granted Patent US 7,952,033
Granted Patent B2
US 7,952,033 · App. 12/039,186 · Granted May 31, 2011

Microstructure and microstructure manufacture method

Assignee: Fujitsu Limited
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,952,033
App. No.
12/039,186
Granted
May 31, 2011
Kind
B2
Abstract

A microstructure comprises a laminate structure having a first conductor, a second conductor, and an intervening insulator located between the first and the second conductors. The first conductor includes opposite faces in relation to the second conductor, side faces, and edge parts which form the boundaries of the aforementioned opposite faces and side faces. The second conductor includes an extended face extending beyond the edge parts exceeding the first conductor. The insulation film includes an area covering at least part of an edge part and/or at least part of a side face.

Claims (10)

1. A microstructure, comprising:

a first conductor having a joint face, a side face, and an edge part forming a boundary to the joint face and the side face;

a second conductor having an extended face extending beyond the joint face of the first conductor exceeding past the edge part;

an intervening insulator forming a laminate structure located between the joint face of the first conductor and the second conductor opposite the joint face;

a pit underneath the edge part, the pit being defined by the joint face, the side face of the intervening insulator, and the extended face; and

an insulation film having an area covering at least part of the edge part and/or at least part of the side face.

2. The microstructure according to claim 1 , wherein the insulation film has an area covering at least part of the extended face of the second conductor.

3. The microstructure according to claim 1 , wherein the intervening insulator has a site extending onto the extended face of the second conductor.

4. The microstructure according to claim 3 , wherein the insulation film has an area covering at least part of the site of the intervening insulator.

5. The microstructure according to claim 1 , wherein the insulation film is a parylene film, an oxide silicon film, or a silicon nitride film.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 30, 2016
From: FUJITSU LIMITED
To: DRNC HOLDINGS, INC.
Reel/Frame 038139/0578 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 7, 2008
From: MIZUNO, YOSHIHIRO; KOUMA, NORINAO; OKUDA, HISAO; SONEDA, HIROMITSU; MATSUMOTO, TSUYOSHI; TSUBOI, OSAMU
To: FUJITSU LIMITED
Reel/Frame 020618/0214 →
Priority Claims (1)
JP 2007-049067 · Feb 28, 2007 · national
Continuity (1)
Related Publication 20080205021A1 · Aug 28, 2008