Substrate processing method for film formation

1. A film-forming method comprising:

providing a substrate to be film-formed in a reaction chamber of an apparatus comprising: the reaction chamber; a first gas supply pipe in fluid communication with the reaction chamber for carrying a first processing gas to the reaction chamber; a second gas supply pipe in fluid communication with the reaction chamber for carrying a second processing gas to the reaction chamber; a gas reservoir in fluid communication with the first gas supply pipe; and a bypass line in fluid communication with the first gas supply pipe, the bypass line bypassing the gas reservoir by directing the first processing gas to the reaction chamber without passing through the gas reservoir; and

alternately supplying the first processing gas and the second processing gas into the reaction chamber a plurality of times to form a film on the substrate, wherein;

when the first processing gas is supplied, the gas reservoir or the bypass line is selected to supply the first processing gas into the reaction chamber through the first gas supply pipe, and when the second processing gas is supplied the second processing gas is supplied through the second gas supply pipe.

2. A film-forming method as recited in claim 1 , wherein the first gas is supplied into the reaction chamber in a state in which the first gas is not excited with plasma, and the second gas supplied to the reaction chamber in a state in which the second gas is excited with plasma.

3. A film-forming method as recited in claim 1 , wherein

when the first gas is supplied into the reaction chamber using the gas reservoir, the first gas is stored in the reservoir while the second gas is supplied into the reaction chamber.

4. A film-forming method as recited in claim 1 , wherein

a pressure in the reaction chamber when the first gas is supplied into the reaction chamber is set higher than a pressure in the reaction chamber when the second gas is supplied to the reaction chamber.

5. A film-forming method comprising:

providing a substrate to be film-formed in a reaction chamber of an apparatus comprising: the reaction chamber; a first gas supply pipe in fluid communication with the reaction chamber for carrying a first processing gas to the reaction chamber; a second gas supply pipe in fluid communication with the reaction chamber for carrying a second processing gas to the reaction chamber; a gas reservoir in fluid communication with the gas supply pipe; a bypass line in fluid communication with the first gas supply pipe, the bypass line bypassing the gas reservoir; a gas supply member disposed in the reaction chamber to supply the first processing gas to the substrate from a periphery of the substrate, the gas supply member being in fluid communication with the first gas supply pipe; and a rotating member to rotate the substrate, and

alternately supplying the first processing gas and the second processing gas into the reaction chamber a plurality of times, with the substrate being rotated by the rotating member;

during the supply of the first processing gas and the supply of the second processing gas to the substrate to form a film on the substrate,

wherein when the first gas is supplied, the gas reservoir or the bypass line is selected to supply the first gas into the reaction chamber through the first gas supply pipe and the first gas is supplied from the periphery of the substrate to the substrate through the gas supply member, and when the second gas is supplied the second gas is supplied through the second gas supply pipe.

6. A film-forming method as recited in claim 5 , wherein

the first gas is supplied into the reaction chamber in a state in which the first gas is not excited with plasma, and the second gas supplied to the reaction chamber in a state in which the second gas is excited with plasma.

7. A film-forming method as recited in claim 5 , wherein

when the first gas is supplied into the reaction chamber using the gas reservoir, the first gas is stored in the reservoir while the second gas is supplied into the reaction chamber.

8. A film-forming method as recited in claim 5 , wherein

a pressure in the reaction chamber when the first gas is supplied into the reaction chamber is set higher than a pressure in the reaction chamber when the second gas is supplied to the reaction chamber.

9. A film-forming method as recited in claim 5 , wherein

when a thickness of the film to be formed is about 1000 A or more, the first gas is supplied using the gas reservoir, and when a thickness of the film to be formed is 100 A or less, the first gas is supplied using the bypass line.

10. A film-forming method as recited in claim 5 , wherein

if a time from when the first processing gas is started to supplied into the reaction chamber to when the first processing gas is started to supplied into the reaction chamber next is defined as one cycle, when the number of the cycles is 60 cycles or more to form the film, the first gas is supplied using the gas reservoir, and when the number of the cycles is less than 60 cycles to form the film, the first gas is supplied using the bypass line.

11. A film-forming method as recited in claim 5 , wherein

if a time from when the first processing gas is started to supplied into the reaction chamber to when the first processing gas is started to supplied to the reaction chamber next is defined as one cycle, the time of the one cycle is different from a time for the substrate to be rotated one turn.