IP Library Granted Patent US 8,574,679
Granted Patent B2
US 8,574,679 · App. 12/040,044 · Granted Nov 5, 2013

Substrate structure and manufacturing method of the same

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Quick Facts
Patent No.
US 8,574,679
App. No.
12/040,044
Granted
Nov 5, 2013
Kind
B2
Abstract

With TiN being a base material, TiN fine particles are deposited on a silicone substrate by, for example, a laser ablation method so that diameters of the TiN fine particles are about 3 nm, and thereafter, Co fine particles are deposited on the silicon substrate on which the TiN fine particles are deposited, by, for example, the laser ablation method so that sizes of the Co fine particles are equal to or smaller than sizes of the fine particles of the TiN fine particles, here about 1 nm in diameter.

Claims (20)

1. A manufacturing method of a substrate structure, comprising the steps of:

forming a base material into first particles contacting a surface of a substrate so that the neighboring first particles are in contact with each other, over the substrate;

depositing a catalytic material as second particles being in a state of particles having a particle diameter equal to or smaller than a particle diameter of the first particles, to fit gaps generated between each pair of the neighboring first particles, on the base material;

growing a linear structure made of carbon elements with the second particles being nucleases;

wherein the catalytic material is in a particle form contacting both the base material and the surface of the substrate.

2. The manufacturing method of the substrate structure according to claim 1 , wherein the base material is one kind selected from Ti, TiN, and Al, or is made of a metal oxide.

3. The manufacturing method of the substrate structure according to claim 1 , wherein the catalytic material is at least one kind selected from Fe, Ni and Co.

4. The manufacturing method of the substrate structure according to claim 1 , wherein the catalytic material has a melting point higher than a melting point of the base material.

5. The manufacturing method of the substrate structure according to claim 1 , wherein the first particles are iron oxide particles contained in an iron-containing protein.

6. The manufacturing method of the substrate structure according to claim 1 , wherein the first particles are particles of cobalt oxide generated with using Co particles surrounded by surfactant.

7. A manufacturing method of a substrate structure, comprising the steps of:

forming a base material into first particles contacting a surface of a substrate so that at least part of the neighboring first particles are in contact with each other and the rest of the neighboring first particles are not in contact with each other, over the substrate;

forming a catalytic material into second particles having a particle diameter equal to or smaller than a particle diameter of the first particles, to fit gaps generated between each pair of the neighboring first particles; and

growing a linear structure made of carbon elements with the second particles being nucleuses,

wherein the catalytic material is made into a state that there mixedly exist a particle contacting the base material and alienated from the surface of the substrate and a particle contacting both the base material and the surface of the substrate.

8. A manufacturing method of a substrate structure, comprising the steps of:

forming a base material into first particles contacting a surface of a substrate so that at least part of the neighboring first particles are in contact with each other and the rest of the neighboring first particles are not in contact with each other, over the substrate;

forming a catalytic material into second particles having a particle diameter equal to or smaller than a particle diameter of the first particles, to fit gaps generated between each pair of the neighboring first particles; and

growing a linear structure made of carbon elements with the second particles being nucleuses,

wherein the catalytic material is formed into a particle form contacting both the base material and the surface of the substrate.

Assignments (4)
CHANGE OF ADDRESS Recorded Dec 23, 2016
From: FUJITSU SEMICONDUCTOR LIMITED
To: FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 041188/0401 →
CHANGE OF NAME Recorded Jul 9, 2010
From: FUJITSU MICROELECTRONICS LIMITED
To: FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 024651/0744 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 9, 2008
From: FUJITSU LIMITED
To: FUJITSU MICROELECTRONICS LIMITED
Reel/Frame 021976/0089 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 11, 2008
From: KAWABATA, AKIO
To: FUJITSU LIMITED
Reel/Frame 020631/0477 →