Method of manufacturing semiconductor device
View Patent ↗Etching is performed on an insulating layer 23 and a conductive layer 32 with a photoresist 41 as the mask, to form an opening 51 in the conductive layer 32 . After removing the photoresist 41 , another insulating layer 24 is formed all over, which is etched back so as to expose a surface of a conductive layer 31 , to thereby cover the inner wall of the opening 51 . Then etching is performed on the conductive layer 31 with the latter insulating layer 24 as the mask, so as to form another opening 52 in the conductive layer 31 . Then still another insulating layer 25 is formed all over, which is then etched back so as to expose a surface of the conductive layer 32 , to thereby fill the opening 52 with the last formed insulating layer 25.
1. A method of manufacturing a semiconductor device, comprising:
forming a first layer over a semiconductor substrate;
forming a second layer over said first layer;
forming a third layer over said second layer;
forming in said third layer an opening having an inner surface;
forming a first sidewall having one side surface thereof adjacent to said inner surface;
forming a first line space in said first layer at a position defined by said first side wall;
forming a second sidewall abutting another side surface of said first sidewall;
forming a second line space in said first layer at a position defined by said second side wall.
2. The method of claim 1 , further comprising filling said first line space and a space defined by said first sidewall with an insulating material, and filling said second line space and a space defined by said second sidewall with said insulating material,
wherein said first sidewall and said second sidewall are formed of said insulating material.
3. The method of claim 1 , wherein said second line space is formed after said first line space is formed.
4. A method of manufacturing a semiconductor device, comprising:
forming a first layer constituted of a conductive film over a semiconductor substrate, a second layer over said first layer, and a third layer over said second layer;
forming a inner edge in said third layer;
forming a first sidewall having a first edge thereof touching said inner edge;
forming a second sidewall having a second edge thereof touching said first edge;
determining a line width of said first layer by using said first and second side walls.
5. The method of claim 4 , wherein said first inner edge defines an opening in said third layer.
6. The method of claim 4 , further comprising removing said third layer after forming said first sidewall and before forming said second sidewall.
7. The method of claim 4 , further comprising forming a first line space in said first layer defined by a third edge of said first sidewall, said third edge opposed to said first edge of said first sidewall.
8. The method of claim 7 , further comprising forming a second line space in said first layer defined by a fourth edge of said second sidewall, said fourth edge being opposed to said second edge of said second sidewall.
9. The method of claim 8 , wherein said second line space is formed after said first line space is formed.