Planar radiation detector using radiation-induced-charge conversion film of amorphous selenium
View Patent ↗In a planar radiation detector having a substrate; a charge-collection electrode; a radiation-induced-charge conversion film formed mainly of amorphous selenium; and an upper electrode which transmits radiation, or in a planar radiation detector having a substrate; a charge-collection electrode; a light-induced-charge conversion film which is formed mainly of amorphous selenium and generates electric charge when the light-induced-charge conversion film is irradiated with visible light which has passed through an upper electrode; the upper electrode which transmits the visible light emitted from a fluorescent layer; and the fluorescent layer formed of a fluorescent material which converts a radiation carrying image information into the visible light, the radiation-induced-charge conversion film or the light-induced-charge conversion film is formed of amorphous selenium or amorphous selenium alloy and has a residual oxygen concentration of 35 ppm or lower.
1. A planar radiation detector comprising:
a substrate;
a charge-collection electrode arranged above said substrate;
a radiation-induced-charge conversion film formed mainly of amorphous selenium and arranged above said charge-collection electrode; and
an upper electrode which transmits radiation and is arranged above said radiation-induced-charge conversion film;
wherein said radiation-induced-charge conversion film is formed of amorphous selenium or amorphous selenium alloy and has a residual oxygen concentration of 35 ppm or lower.
2. A planar radiation detector according to claim 1 , wherein said residual oxygen concentration is 15 ppm or lower.
3. A planar radiation detector according to claim 1 , wherein said radiation-induced-charge conversion film contains halogen at a concentration of 1 ppm or lower.
4. A planar radiation detector according to claim 1 , wherein said radiation-induced-charge conversion film contains alkali metal at a concentration of 0.001 to 10 ppm.
5. A planar radiation detector comprising:
a substrate;
a charge-collection electrode arranged above said substrate;
a light-induced-charge conversion film which is formed mainly of amorphous selenium and arranged above said charge-collection electrode, and generates electric charge when the light-induced-charge conversion film is irradiated with visible light which has passed through an upper electrode; and
said upper electrode which is arranged above said light-induced-charge conversion film, and transmits said visible light emitted from a fluorescent layer; and said fluorescent layer arranged above said upper electrode and formed of a fluorescent material which converts a radiation carrying image information into said visible light;
wherein said light-induced-charge conversion film is formed of amorphous selenium or amorphous selenium alloy and has a residual oxygen concentration of 35 ppm or lower.
6. A planar radiation detector according to claim 5 , wherein said residual oxygen concentration is 15 ppm or lower.
7. A planar radiation detector according to claim 5 , wherein said amorphous selenium or amorphous selenium alloy is produced by producing a mixture of high-purity amorphous selenium and a material having bonding strength to oxygen greater than the amorphous selenium and being able to be oxidized to produce an oxide which has a higher vapor pressure than the amorphous selenium, and performing on the mixture at least one of heating and vacuum distillation.
8. A planar radiation detector according to claim 7 , wherein said mixture contains said material with a concentration of 10 to 1,000 ppm before said at least one of heating and vacuum distillation.
9. A planar radiation detector according to claim 7 , wherein said material is arsenic.
10. A planar radiation detector according to claim 7 , wherein said material is sulfur.
11. A planar radiation detector according to claim 7 , wherein said heating is performed in inert gas.
12. A planar radiation detector according to claim 5 , wherein said amorphous selenium or amorphous selenium alloy is produced by performing heating of high-purity amorphous selenium while blowing reductive gas into the high-purity amorphous selenium.
13. A planar radiation detector according to claim 12 , wherein vacuum distillation is performed on said high-purity amorphous selenium after said heating.
14. A planar radiation detector according to claim 5 , wherein said light-induced-charge conversion film contains halogen with a concentration of 1 ppm or lower.
15. A planar radiation detector according to claim 5 , wherein said light-induced-charge conversion film contains alkali metal with a concentration of 0.001 to 10 ppm.
16. A planar radiation detector comprising:
a substrate;
a charge-collection electrode arranged above said substrate;
a charge conversion film which is formed mainly of amorphous selenium and arranged above said charge-collection electrode, wherein the charge conversion film is light-induced charge conversion film or radiation-induced charge conversion film; and
an upper electrode which is arranged above said charge conversion film, and transmits the radiation or visible light,
wherein said charge conversion film is formed of amorphous selenium or amorphous selenium alloy and has a residual oxygen concentration of 35 ppm or lower.