Barrier film material and pattern formation method using the same
View Patent ↗A barrier film material includes, in addition to an alkali-soluble polymer, a multivalent carboxylic acid compound having a plurality of carboxyl groups or a multivalent alcohol compound. Thus, the multivalent carboxylic acid compound or the multivalent alcohol compound is adhered onto the surface of a resist film, and hence, particles having been adhered to the surface of the resist film are removed in removing the barrier film. Also, in the case where the barrier film is removed simultaneously with development, the resist film can be prevented from remaining partly undissolved.
1. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
forming, on the resist film, a barrier film including a multivalent carboxylic acid and an alkali-soluble polymer;
performing exposure through a desired mask with a liquid provided on the barrier film;
removing the barrier film after the exposure; and
forming a resist pattern through development after removing the barrier film, wherein:
in the step of forming the barrier film, the barrier film dissolves a surface portion of the resist film, and
the barrier film is formed by using a barrier film material including the alkali-soluble polymer, the multivalent carboxylic acid, and a solvent different from the multivalent carboxylic acid.
2. The pattern formation method of claim 1 ,
wherein the multivalent carboxylic acid is a saturated aliphatic carboxylic acid, an unsaturated aliphatic carboxylic acid, a saturated cyclic carboxylic acid or an aromatic carboxylic acid.
3. The pattern formation method of claim 2 ,
wherein the saturated aliphatic carboxylic acid is malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid or sebacic acid.
4. The pattern formation method of claim 2 ,
wherein the unsaturated aliphatic carboxylic acid is fumaric acid or maleic acid.
5. The pattern formation method of claim 2 ,
wherein the saturated cyclic carboxylic acid is 1,2-cyclohexanedicarboxylic acid, 1,3-cyclohexanedicarboxylic acid, 1,4-cyclohexanedicarboxylic acid, 1,2,3-cyclohexanetricarboxylic acid, 1,2,4-cyclohexanetricarboxylic acid, 1,3,5-cyclohexanetricarboxylic acid, 1,2,3,4-cyclohexanetetracarboxylic acid, 1,2,3,5-cyclohexanetetracarboxylic acid, 1,2,4,5-cyclohexanetetracarboxylic acid or cyclohexanehexacarboxylic acid.
6. The pattern formation method of claim 2 ,
wherein the aromatic carboxylic acid is 1,2-benzene dicarboxylic acid, 1,3-benzene dicarboxylic acid, 1,4-benzene dicarboxylic acid, 1,2,3-benzene tricarboxylic acid, 1,2,4-benzene tricarboxylic acid, 1,3,5-benzene tricarboxylic acid, 1,2,3,4-benzene tetracarboxyilc acid, 1,2,3,5-benzene tetracarboxylic acid, 1,2,4,5-benzene tetracarboxylic acid or benzene hexacarboxylic acid.
7. The pattern formation method of claim 1 ,
wherein the alkali-soluble polymer is polyvinyl alcohol, polyacrylic acid or polyvinyl hexafluoroisopropyl alcohol.
8. The pattern formation method of claim 1 , further comprising a step of annealing the barrier film between the step of forming a barrier film and the step of performing exposure.
9. The pattern formation method of claim 1 ,
wherein the liquid is water or an acidic solution.
10. The pattern formation method of claim 9 ,
wherein the acidic solution is a cesium sulfate aqueous solution or a phosphoric acid aqueous solution.
11. The pattern formation method of claim 1 ,
wherein the exposing light is KrF excimer laser, Xe 2 laser, ArF excimer laser, F 2 laser, KrAr laser or Ar 2 laser.
12. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
forming, on the resist film, a barrier film including a multivalent carboxylic acid and an alkali-soluble polymer;
performing exposure through a desired mask with a liquid provided on the barrier film; and
removing the barrier film and forming a resist pattern by performing development after the exposure, wherein:
in the step of forming the barrier film, the barrier film dissolves a surface portion of the resist film, and
the barrier film is formed by using a barrier film material including the alkali-soluble polymer, the multivalent carboxylic acid, and a solvent different from the multivalent carboxylic acid.
13. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
forming, on the resist film, a barrier film including a multivalent alcohol and an alkali-soluble polymer;
performing exposure through a desired mask with a liquid provided on the barrier film;
removing the barrier film after the exposure; and
forming a resist pattern through development after removing the barrier film, wherein:
the barrier film is formed by using a barrier film material including the alkali-soluble polymer, the multivalent carboxylic acid, and a solvent different from the multivalent carboxylic acid, and
the barrier film material includes the multivalent alcohol in a range of 10 wt % through 30 wt % with respect to the alkali-soluble polymer.
14. The pattern formation method of claim 13 ,
wherein the multivalent alcohol is ethylene glycol, 1,3-propanediol, 1,6-hexanediol, diethylene glycol, neopentyl glycol or 1,2,3-propanetriol.
15. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
forming, on the resist film, a barrier film including a multivalent alcohol and an alkali-soluble polymer;
performing exposure through a desired mask with a liquid provided on the barrier film; and
removing the barrier film and forming a resist pattern by performing development after the exposure, wherein:
the barrier film is formed by using a barrier film material including the alkali-soluble polymer, the multivalent carboxylic acid, and a solvent different from the multivalent carboxylic acid, and
the barrier film material includes the multivalent alcohol in a range of 10 wt % through 30 wt % with respect to the alkali-soluble polymer.
16. A barrier film material disposed on a resist film in immersion exposure technique using ArF excimer laser or F 2 laser as exposing light, the barrier film material comprising a multivalent carboxylic acid, an alkali-soluble polymer, and a solvent different from the multivalent carboxylic acid, wherein:
the multivalent carboxylic acid is a saturated aliphatic carboxylic acid or a saturated cyclic carboxylic acid, and
the saturated aliphatic carboxylic acid or the saturated cyclic carboxylic acid is included in a range of 0.1 wt % through 50 wt % with respect to the alkali-soluble polymer.
17. A barrier film material disposed on a resist film in immersion exposure technique using ArF excimer laser or F 2 laser as exposing light, the barrier film material comprising a multivalent carboxylic acid, an alkali-soluble polymer, and a solvent different from the multivalent carboxylic acid, wherein:
the multivalent carboxylic acid is an unsaturated aliphatic carboxylic acid or an aromatic carboxylic acid, and
the unsaturated aliphatic carboxylic acid or the aromatic carboxylic acid is included in a range of 0.01 wt % through 5 wt % with respect to the alkali-soluble polymer.
18. The barrier film material of claim 16 ,
wherein the saturated aliphatic carboxylic acid is malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid or sebacic acid.
19. The barrier film material of claim 17 ,
wherein the unsaturated aliphatic carboxylic acid is fumaric acid or maleic acid.
20. The barrier film material of claim 16 ,
wherein the saturated cyclic carboxylic acid is 1,2-cyclohexanedicarboxylic acid, 1,3-cyclohexanedicarboxylic acid, 1,4-cyclohexanedicarboxylic acid, 1,2,3-cyclohexanetricarboxylic acid, 1,2,4-cyclohexanetricarboxylic acid, 1,3,5-cyclohexanetricarboxylic acid, 1,2,3,4-cyclohexanetetracarboxylic acid, 1,2,3,5-cyclohexanetetracarboxylic acid, 1,2,4,5-cyclohexanetetracarboxylic acid or cyclohexanehexacarboxylic acid.
21. The barrier film material of claim 17 ,
wherein the aromatic carboxylic acid is 1,2-benzene dicarboxylic acid, 1,3-benzene dicarboxylic acid, 1,4-benzene dicarboxylic acid, 1,2,3-benzene tricarboxylic acid, 1,2,4-benzene tricarboxylic acid, 1,3,5-benzene tricarboxylic acid, 1,2,3,4-benzene tetracarboxyilc acid, 1,2,3,5-benzene tetracarboxylic acid, 1,2,4,5-benzene tetracarboxylic acid or benzene hexacarboxylic acid.
22. A barrier film material disposed on a resist film in immersion exposure technique, the barrier film material comprising a multivalent alcohol, an alkali-soluble polymer, and a solvent different from the multivalent alcohol, wherein
the multivalent alcohol is included in a range of 10 wt % through 30 wt % with respect to the alkali-soluble polymer.
23. The barrier film material of claim 22 ,
wherein the multivalent alcohol is ethylene glycol, 1,3-propanediol, 1,6-hexanediol, diethylene glycol, neopentyl glycol or 1,2,3-propanetriol.
24. The barrier film material of claim 2 , wherein
the barrier film material includes the saturated aliphatic carboxylic acid or the saturated cyclic carboxylic acid in a range of 0.1 wt % through 50 wt % with respect to the alkali-soluble polymer.
25. The barrier film material of claim 2 , wherein
the barrier film material includes the unsaturated aliphatic carboxylic acid or the aromatic carboxylic acid in a range of 0.01 wt % through 5 wt % with respect to the alkali-soluble polymer.