Crystallization apparatus, crystallization method, device, and light modulation element

1. A crystallization apparatus comprising: a light modulation element; and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface, the crystallization apparatus irradiating a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film,

wherein a curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.

2. A crystallization apparatus comprising an image forming optical system that forms a light intensity distribution set based on light transmitted through a light modulation element on an irradiation surface, the crystallization apparatus irradiating a non-single crystal semiconductor film with light having the set light intensity distribution to generate a crystallized semiconductor film,

wherein the crystallization apparatus has an optical system that forms on the non-single crystal semiconductor film a light intensity distribution in which at least one isointensity line of a light intensity has a shape which is elongated in a specific direction, a curvature radius of the isointensity line substantially varies along the isointensity line, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.

3. A crystallization apparatus comprising an image forming optical system that forms a light intensity distribution set based on light transmitted through a light modulation element on an irradiation surface, the crystallization apparatus irradiating a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film,

wherein the crystallization apparatus has an optical system that forms on the non-single crystal semiconductor film a light intensity distribution in which a curvature radius of each of isointensity lines corresponding to a light intensity in the range of at least ±2.5% with a reference light intensity at the center substantially varies along the isointensity line and a curvature radius of at least a part of each of the isointensity lines has a minimum value of 0.3 μm or below.

4. A crystallization apparatus comprising an image forming optical system that forms a light intensity distribution set based on light transmitted through a light modulation element on an irradiation surface, the crystallization apparatus irradiating a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film,

wherein the crystallization apparatus has an optical system that forms on the non-single crystal semiconductor film a light intensity distribution in which a curvature radius of at least a part of an isointensity line of a light intensity is 0.3 μm or below.

5. The apparatus according to claim 1 , wherein the isointensity line is an isointensity line of a light intensity associated with a melting temperature of the non-single crystal semiconductor film.

6. The apparatus according to claim 4 , wherein the curvature radius of the isointensity line substantially varies along the isointensity line and has a minimum value lower than those of peripheral parts thereof.

7. The apparatus according to claim 1 , wherein the set light intensity distribution has a gradient distribution in which a light intensity is increased from a region having a minimum curvature radius of the isointensity line toward the outside along a normal line of the isointensity line.

8. The apparatus according to claim 7 , wherein, in the gradient distribution, a change in the light intensity along a specific direction from the region having the minimum curvature radius is gentler than a change in the light intensity along a direction around the specific direction.

9. A crystallization method of irradiating a non-single crystal semiconductor film with light having a predetermined light intensity distribution to generate a crystallized semiconductor film,

wherein the non-single crystal semiconductor film is irradiated with light having a light intensity distribution in which a curvature radius of at least a part of an isointensity line of a light intensity is 0.3 μm or below.

10. The method according to claim 9 , wherein the isointensity line is an isointensity line of a light intensity associated with a melting temperature of the non-single crystal semiconductor film.

11. The method according to claim 9 , a curvature radius of the isointensity line substantially varies along the isointensity line and has a minimum value lower than those of peripheral isointensity lines.

12. The method according to claim 11 , wherein the predetermined light intensity distribution has a gradient distribution in which a light intensity is increased from a region having a minimum curvature radius of the isointensity line toward the outside along a normal line of the isointensity line.

13. The method according to claim 12 , wherein, in the gradient distribution, a change in a light intensity from the region having the minimum curvature radius in a specific direction is gentler than a change in a light intensity along a direction around the specific direction.

14. A device manufactured by using the crystallization apparatus according to claim 1 .

15. A light modulation element which is used in the crystallization apparatus according to claim 1 to form the predetermined light intensity distribution.