Surface modifying carbon nanotube material, manufacturing method therefor, electronic component and electronic device

1. A method for manufacturing a surface modified carbon nanotube material, the method comprising a combination of exposing the carbon nanotube material to ultraviolet rays and supplying a silicon-containing compound to the carbon nanotube material,

wherein the ultraviolet rays include only a wavelength component in the range of 10 to 200 nms, and does not include a wavelength component in the range longer than 200 nms.

2. The method according to claim 1 , wherein the surface of the surface modified carbon nanotube material is modified with at least one of a silicon-containing group and a silicon-containing compound.

3. The method according to claim 1 , wherein the silicon-containing compound is a substance capable of generating chemically active species when activated by ultraviolet rays.

4. The method according to claim 1 , wherein the carbon nanotube material, the surface of which is to be modified has been prepared by CVD.

5. The method according to claim 1 , wherein the carbon nanotube material, the surface of which is to be modified has been grown on a substrate.

6. The method according to claim 1 , wherein the surface modified carbon nanotube material has better wettability when in contact with a silicon-containing substance than before the modification.

7. The method according to claim 1 , wherein the surface modified carbon nanotube material has better wettability than before the modification when in contact with at least one selected from the group consisting of the electrically conductive substances, insulating substances, hydrophilic substances, lipophilic substances, and substances having specific groups.

8. The method according to claim 1 , wherein silicon atoms are present on the surface of the surface modified carbon nanotube material.

9. The method according to claim 8 , wherein silicon-carbon bonds are present on the surface of the surface modified carbon nanotube material.

10. The method according to claim 3 , wherein the chemically active species comprise at least either an electron donating group radical or electron attractive group radical.

11. The method according to claim 1 , wherein the silicon containing compound is diluted with an inactive substance that does not modify the surface of the carbon nanotube material even when exposed to the ultraviolet rays.

12. The method according to claim 1 , wherein the silicon-containing compound is supplied together with at least one substance selected from the group consisting of hydrocarbons, oxygen, amines, alkyl halides, alcohols, ethers and mixtures thereof.

13. The method according to claim 1 , wherein said silicon-containing compound is supplied to the carbon nanotube material in a gaseous phase.