METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, PATTERN CORRECTION APPARATUS, AND COMPUTER-READABLE RECORDING MEDIUM

1 . A method of manufacturing a semiconductor device comprising:

measuring a first width of a first mask pattern formed in a photomask and a second width of a second mask pattern formed in the photomask;

forming a resist over a member to be etched;

transferring the first mask pattern and the second mask pattern to the resist, and forming a first resist pattern and a second resist pattern;

coating a thickening material to cover the first resist pattern and the second resist pattern;

deciding a temperature of heat treatment based on measured results;

executing the heat treatment of the thickening material at the temperature; and

etching the member using the first resist pattern and the second resist pattern.

2 . The method of claim 1 , further comprising:

determining a relationship between the temperature of the heat treatment and dimension changes of the first resist pattern and the second resist pattern in the heat treatment for the thickening.

3 . The method of claim 1 , wherein a relationship of x<y is satisfied in which x is a distance between the first mask pattern and a third mask pattern adjacent to the first mask pattern and y is a distance between the second mask pattern and a fourth mask pattern adjacent to the second mask pattern.

4 . The method of claim 1 , further comprising:

deciding an amount of exposure based on a relationship between the amount of exposure and amounts of dimension changes of the first resist pattern and the second resist pattern.

5 . The method claim 1 , wherein the resist contains polyhydroxystyrene or an acrylic resin.

6 . The method of claim 1 , wherein the thickening material is polyvinyl alcohol.

7 . The method of claim 1 , wherein the first mask pattern corresponds to a gate electrode of a transistor formed over a semiconductor substrate.

8 . The method of claim 1 , wherein, in deciding the temperature of the heat treatment for the thickening, the temperature is decided based on a first difference between a design value of the first mask pattern and the first width of the first mask pattern and a second difference between a design value of the second mask pattern and the second width of the second mask pattern.

9 . The method of claim 8 , wherein, in deciding the temperature of the heat treatment for the thickening, the temperature is decided based on a third difference between the first difference and the second difference.

10 . A pattern correction apparatus comprising:

a measurement section measuring a first width of a first mask pattern formed in a photomask and a second width of a second mask pattern formed in the photomask; and

a heat treatment temperature calculating section deciding, based on results measured by the measurement section, a temperature of heat treatment for a thickening material that is coated over a first resist pattern corresponding to the first mask pattern and a second resist pattern corresponding to the second mask pattern.

11 . The pattern correction apparatus according to claim 10 , wherein the measurement section calculates a first difference between the first width of the first mask pattern and a design width of the first mask pattern and a second difference between the second width of the second mask pattern and a design width of the second mask pattern.

12 . The pattern correction apparatus according to claim 10 , wherein the heat treatment temperature calculating section decides, based on the first difference and the second difference, the temperature of the heat treatment by using a relationship of the temperature of the heat treatment with respect to a first change amount of width of the first resist pattern and a second change amount of width of the second resist pattern.

13 . The pattern correction apparatus according to claim 10 , wherein a relationship of x<y is satisfied in which x is a distance between the first mask pattern and a third pattern adjacent to the first mask pattern and y is a distance between the second mask pattern and a fourth pattern adjacent to the second mask pattern.

14 . A computer-readable recording medium storing a program causing a computer to execute operations comprising:

causing a measurement section to measure a first width of a first mask pattern formed in a photomask and a second width of a second mask pattern formed in the photomask; and

causing a heat treatment temperature calculating section to decide, based on results measured by the measurement section, a temperature of heat treatment for a thickening material that is coated over a first resist pattern corresponding to the first mask pattern and a second resist pattern corresponding to the second mask pattern.

15 . The computer-readable recording medium according to claim 14 , further comprising causing the measurement section to calculate a first difference between the first width of the first mask pattern and a design width of the first mask pattern and a second difference between the second width of the second mask pattern and a design width of the second mask pattern.

16 . The computer-readable recording medium according to claim 14 , wherein the program causes the heat treatment temperature calculating section to decide, based on the first difference and the second difference, the temperature of the heat treatment by using a relationship of the temperature of the heat treatment with respect to a first change amount of width of the first resist pattern and a second change amount of width of the second resist pattern, which are caused by the heat treatment.