Dual gate lateral diffused MOS transistor
View Patent ↗A disclosed power transistor, suitable for use in a switch mode converter that is operable with a switching frequency exceeding, for example, 5 MHz or more, includes a gate dielectric layer overlying an upper surface of a semiconductor substrate and first and second gate electrodes overlying the gate dielectric layer. The first gate electrode is laterally positioned overlying a first region of the substrate. The first substrate region has a first type of doping, which may be either n-type or p-type. A second gate electrode of the power transistor overlies the gate dielectric and is laterally positioned over a second region of the substrate. The second substrate region has a second doping type that is different than the first type. The transistor further includes a drift region located within the substrate in close proximity to an upper surface of the substrate and laterally positioned between the first and second substrate regions.
1. A power transistor, comprising:
a gate dielectric layer overlying an upper surface of a semiconductor substrate;
a first gate electrode overlying the gate dielectric and laterally positioned overlying a first region of the substrate, the first region having a first doping type selected from an n-type doping and a p-type doping;
a second gate electrode overlying the gate dielectric and laterally positioned over a second region of the substrate, the second region having a second doping type selected from an n-type doping and a p-type doping, wherein the first type and the second type are different;
a drift region within the substrate, laterally positioned between the first and second substrate regions, the drift region underlying a lateral gap defined between the first and second gate electrodes wherein a boundary of the drift region is aligned to the first gate electrode, the drift region having the second doping type;
a first source/drain region in the substrate, the first source/drain region having the second doping type, wherein a boundary of the first source/drain region is aligned to the first gate electrode; and
a second source/drain region in the substrate, the second source/drain region having the second doping type, wherein a boundary of the second source/drain region is aligned to the second gate electrode.
2. The power transistor of claim 1 , wherein the first substrate region extends laterally between the first source/drain region and the drift region and wherein the second substrate region extends laterally between the drift region and the second source/drain region.
3. The power transistor of claim 1 , wherein a doping concentration of the drift region is greater than a doping concentration of the second substrate region and wherein a doping concentration of the first source/drain region exceeds the doping concentration of the drift region.
4. The power transistor of claim 1 , further comprising an extension region at a lateral edge of the first source/drain drain region, wherein the extension region has the second doping type but wherein an impurity concentration of the extension region is at least an order of magnitude less than the doping concentration of the first source/drain region.
5. The power transistor of claim 1 , wherein the first substrate region includes a first well and the second substrate region includes a second well.
6. The power transistor of claim 5 , wherein the first well is substantially confined to a portion of the first substrate region underlying the first source/drain region.
7. A method for fabricating a power transistor, comprising:
forming a gate dielectric layer overlying an epitaxial layer of a substrate, the epitaxial layer comprising a semiconductor material;
forming a first gate electrode and a second gate electrode overlying the gate dielectric, the first gate electrode overlying a first region of the epitaxial layer and the second gate electrode overlying a second region of the epitaxial layer, wherein a lateral displacement between the first and second gate electrodes defines a gap overlying a boundary between the first and second regions of the epitaxial layer;
forming a drift region in the epitaxial layer underlying the gap, a boundary of the drift region being aligned to the first gate electrode; and
forming a first source/drain region in the first region of the epitaxial layer and a second source/drain region in the second region of the epitaxial layer;
wherein the first region of the epitaxial layer is a p-type region, the second region of the epitaxial layer is an n-type region, the drift region is an n-type region having a doping concentration that is greater than a doping concentration of the second region, and the first and second source/drain regions comprise n-type regions having doping concentrations greater than the doping concentration of the drift region.
8. The method of claim 7 , further comprising, forming a first well in the first region of the epitaxial layer and forming a second well in the second region of the epitaxial layer.
9. The method of claim 8 , wherein forming the first well comprises forming a p-type well in the epitaxial layer, wherein a doping concentration of the p-type well exceeds a doping concentration of the epitaxial layer.
10. The method of claim 9 , wherein a boundary of the p-type well is aligned to the first gate electrode wherein the p-type well is substantially confined to a portion of the epitaxial layer underlying the first source/drain region, the method further comprising forming a halo region adjacent to a lateral edge of the first source/drain region.