Demountable interconnect structure

1. An electronic component, comprising:

a base insulative layer having a first surface and a second surface;

an electronic device having a first surface and a second surface;

at least one I/O contact pad located on the first surface of the electronic device;

a first metal layer disposed on the at least one I/O contact pad;

a removable layer disposed between the first surface of the electronic device and the second surface of the base insulative layer, and located adjacent to the first metal layer; and

an adhesive layer having a first side and an opposing second side, the first side facing the second surface of the base insulative layer and the second side facing both the first metal layer and the removable layer;

wherein the first side of the adhesive layer is adhered onto the second surface of the base insulative layer and the second side of the adhesive layer is adhered onto the removable layer;

wherein the base insulative layer secures to the electronic device through the first metal layer and removable layer, and the first metal layer and removable layer are capable of releasing the base insulative layer from the electronic device when the first metal layer and removable layer are exposed to a temperature higher than their softening point or melting point; and

wherein the first metal layer has a thickness that is equal to or less than a thickness of the removable layer, with the first metal layer not extending out onto a surface of the removable layer opposite the electronic device.

2. The electronic component of claim 1 , wherein the first metal layer has a perimeter substantially equal to a perimeter of the I/O contact the first metal layer is disposed on.

3. The electronic component of claim 1 , wherein the removable layer is sized so as to not extend out past a perimeter of electronic device.

4. An electronic component, comprising:

a base insulative layer having a first surface and a second surface;

a semiconductor silicon chip having a first surface and a second surface;

at least one I/O contact pad located on the first surface of the semiconductor silicon chip;

first and second metal layers disposed on the at least one I/O contact pad, wherein the first metal layer is disposed directly on the at least one I/O contact pad and the second metal layer is disposed on the first metal layer;

a removable layer disposed between the first surface of the semiconductor silicon chip and the second surface of the base insulative layer, and located adjacent to the first metal layer;

an adhesive layer having a first side and an opposing second side, the first side adhered to the second surface of the base insulative layer and the second side adhered to the first and second metal layers and the removable layer; and

an electrically conductive interconnect disposed within each of one or more vias extending through the removable layer and the adhesive layer, the electrically conductive interconnect extending through each of the one or more vias to the second metal layer on the semiconductor silicon chip;

wherein the base insulative layer secures to the semiconductor silicon chip through the first and second metal layers and the removable layer, and wherein the removable layer and at least one of the first and second metal layers are capable of releasing the base insulative layer from the semiconductor chip when the removable layer and first and second metal layers are exposed to a temperature higher than their softening points or melting points.