Method of manufacturing semiconductor device using electrochemical deposition with electric current revised by reflectance of every substrate surface and semiconductor manufacturing apparatus
View Patent ↗A method of manufacturing a semiconductor device includes measuring the reflectance at the surface of a semiconductor substrate provided with concave portions and deciding a deposition parameter that represents a deposition condition corresponding to the measured reflectance. Then, a metal film is formed on the semiconductor substrate under a condition corresponding to the deposition parameter.
1. A semiconductor manufacturing apparatus, comprising:
a measuring section which measures a reflectance at a surface of a substrate;
a memory section which stores, as a data, the measured reflectance or an area of the surface corresponding to the measured reflectance;
a control table which relates a plurality of areas of the surface or a plurality of reflectances to a respective deposition parameter;
a processing control section which specifies a deposition parameter corresponding to the data with reference to the control table;
a processing section which conducts a film formation, by using the deposition parameter specified by the processing control section; and
a calculation section which derives the area of the surface based on the reflectance measured by the measuring section.
2. The apparatus as claimed in claim 1 , wherein the control table includes a plurality of control tables in accordance with a kind of seed film.
3. The apparatus according to claim 1 , wherein the processing section conducts the film formation with an electrolytic plating, and the deposition parameter comprises a value of a current supplied to a plating solution upon electrolytic plating.
4. The apparatus according to claim 1 , wherein the measuring section includes a transferring station of the substrate.
5. The apparatus according to claim 4 , wherein the transferring station includes a function of aligner for the substrate.
6. The semiconductor manufacturing apparatus as claimed in claim 1 , wherein the processing control section specifies the deposition parameter corresponding to the area of the surface derived by the calculation section with reference to the control table.
7. A semiconductor manufacturing apparatus, comprising:
a measuring section which measures a reflectance at a surface of a substrate;
a calculation section which derives an area of the surface from the reflectance measured by the measuring section;
a control table, which relates a plurality of areas of the surface to a respective deposition parameter;
a processing control section which specifies a deposition parameter corresponding to the area of the surface derived by the calculation section with reference to the control table; and
a processing section which conducts a film formation, by using the deposition parameter specified by the processing control section.
8. The semiconductor manufacturing apparatus according to claim 7 , further comprising:
a memory section which stores, as a data, the reflectance measured by the measuring section or the area of the surface derived by the calculation section.
9. The semiconductor manufacturing apparatus according to claim 8 , wherein the control table includes a plurality of control tables in accordance with a kind of seed film.