Epitaxial ferromagnetic Ni
View Patent ↗An epitaxial Ni 3 FeN film with unique magnetic properties such as single magnetic domain (even in a large scale 0.5″×0.5″), which rotates coherently in response to the desired switching field with a very sharp transition is described. The magnetic hysteresis loop of this new magnetic nitride is close to the perfect ideal square with the same value of saturation magnetization, remnant magnetization, and magnetization right before switching (domain reversal). The switching field is tunable which make this material more attractive for magneto-resistive devices such as MRAM's, read heads and magnetic sensors.
1. Epitaxial Ni 3 FeN exhibiting magnetic anisotropy, a single magnetic domain, and an essentially a square transition movement upon switching of an external applied magnetic field direction providing a hysteresis loop.
2. The Ni 3 FeN of claim 1 which has been grown on Al 2 O 3 (11 2 0).
3. The Ni 3 FeN of claim 1 which has been grown on layers of Cu on Nb on Al 2 O 3 (11 2 0).
4. The Ni 3 FeN of claims 1 , 2 or 3 wherein the sharp transition between magnetization states, ΔH SW , is equal to about 0.025 Oe.
5. The Ni 3 FeN of claim 1 on a substrate comprising Al 2 O 3 (11 2 0).