Semiconductor laser element and method for producing same
View Patent ↗A semiconductor laser element realizes a high COD light output in broader range of reflection factor at a facet with high reliability. A semiconductor laser element has a multi-layered reflection film formed on at least one end facet of a resonator. An optical path length of each layer of said multi-layered reflection film is determined by (2m−1)·λ/4, where λ is oscillation wavelength, and m is positive integer). A high-refractive-index layer and a low-refractive-index layer are alternately stacked starting from a first layer adjacent to said semiconductor.
1. A semiconductor laser element comprising a multi-layered reflection film formed on at least one facet of a resonator,
wherein a phase difference between emitted laser light and reflected light from the multi-layered reflection film ranges from (1−0.45)·π to (1+0.45)·π at an emission facet,
wherein an optical path length of each layer of second and subsequent layers except a last layer is determined by λ/4−r·n 1 ·d 1 , where λ is an oscillation wavelength, r is a correction factor of 0.5 to 2.5, and n 1 and d 1 are a refractive index and a thickness of the first layer adjacent to said semiconductor, respectively, and
wherein a low refractive index layer and a high refractive index layer are alternately stacked starting from the first layer adjacent to said semiconductor.
2. The semiconductor laser element as defined in claim 1 , wherein an optical path length of each layer of said multi-layered reflection film is determined by (2m−1)·λ/4, where λ is the oscillation wavelength, and m is a positive integer, and
wherein a high refractive index layer and a low refractive index layer are alternately stacked starting from a first layer adjacent to said semiconductor.
3. The semiconductor laser element as defined in claim 1 , wherein an optical path length of each layer of said multi-layered reflection film is within ±20% of a value determined by (2m−1)·λ/4, where λ is the oscillation wavelength, and m is a positive integer, and
wherein a high refractive index layer and a low refractive index layer are alternately stacked starting from a first layer adjacent to said semiconductor.
4. The semiconductor laser element as defined in claim 1 , wherein an optical path length of each layer of second and subsequent layers of said multi-layered reflection film is determined by (2m−1)·λ/4, where λ is oscillation wavelength, and m is a positive integer,
wherein an optical path length of a first layer adjacent to said semiconductor is determined by n·λ/2, where λ is the oscillation wavelength, and n is a positive integer, and
wherein a low refractive index layer and a high refractive index layer are alternately stacked starting from the first layer adjacent to said semiconductor.
5. The semiconductor laser element as defined in claim 1 , wherein an optical path length of each layer of second and subsequent layers of said multi-layered reflection film is within ±20% of a value determined by (2m−1)·λ/4, where λ is oscillation wavelength, and m is positive integer,
wherein an optical path length of the first layer adjacent to said semiconductor is within ±20% of a value determined by n·λ/2, where λ is oscillation wavelength, and n is positive integer, and
wherein a low refractive index layer and a high refractive index layer are alternately stacked starting from the first layer adjacent to said semiconductor.
6. The semiconductor laser element as defined in claim 1 , wherein said thickness d 1 of said first layer adjacent to said semiconductor is 1-60 nm.
7. The semiconductor laser element as defined in claim 1 , wherein a protective layer whose optical path length is determined by m·λ/2, where λ is oscillation wavelength, and m is a positive integer, is formed as a last layer of said multi-layered reflection film.
8. The semiconductor laser element as defined in claim 1 , wherein a material of said semiconductor is selected from a group consisting of AlGaInAs/InP system, AlGaAs/GaAs system, AlGaAs/InGaAs/GaAs system, AlGaInP/GaInP/GaAs system and AlGaN/InGaN/GaN system.
9. The semiconductor laser element as defined in claim 1 , wherein said multi-layered reflection film comprises at least three or four layers.
10. A method for producing a semiconductor laser element comprising:
providing a resonator; and
forming a multi-layered reflection film on at least one facet of the resonator,
wherein a phase difference between emitted laser light and reflected light from the multi-layered reflection film is adjusted in a range from (1−0.45)·π to (1+0.45)·π at an emission facet,
wherein an optical path length of each layer of second and subsequent layers except a last layer is determined by 80 /4−r·n 1 ·d 1 , where λ is an oscillation wavelength, r is a correction factor of 0.5 to 2.5, and n 1 and d 1 are a refractive index and a thickness of the first layer adjacent to said semiconductor, respectively, and
wherein a low refractive index layer and a high refractive index layer are alternately stacked starting from the first layer adjacent to said semiconductor.
11. The method for producing a semiconductor laser element as defined in claim 10 , wherein an optical path length of each layer of said multi-layered reflection film is determined by (2m−1)·λ/4, where λ is the oscillation wavelength, and m is a positive integer, and
wherein a high refractive index layer and a low refractive index layer are alternately stacked starting from a first layer adjacent to said semiconductor.
12. The method for producing a semiconductor laser element as defined in claim 10 , wherein an optical path length of each layer of said multi-layered reflection film is within ±20% of a value determined by (2m−1)·λ/4, where λ is the oscillation wavelength, and m is a positive integer, and
wherein a high refractive index layer and a low refractive index layer are alternately stacked starting from a first layer adjacent to said semiconductor.
13. The method for producing a semiconductor laser element as defined in claim 10 , wherein an optical path length of each layer of second and subsequent layers of said multi-layered reflection film is determined by (2m−1)·λ/4, where λ is the oscillation wavelength, and m is a positive integer,
wherein an optical path length of a first layer adjacent to said semiconductor is determined by n·λ/2, where λ is the oscillation wavelength, and n is a positive integer; and
wherein a low refractive index layer and a high refractive index layer are alternately stacked starting from the first layer adjacent to said semiconductor.
14. The method for producing a semiconductor laser element as defined in claim 10 , wherein an optical path length of each layer of second and subsequent layers of said multi-layered reflection film is within ±20% of a value determined by (2m−1)·λ/4, where λ is oscillation wavelength, and m is a positive integer,
wherein an optical path length of the first layer adjacent to said semiconductor is within ±20% of a value determined by n·λ/2, where λ is the oscillation wavelength, and n is a positive integer, and
wherein a low refractive index layer and a high refractive index layer are alternately stacked starting from the first layer adjacent to said semiconductor.
15. The method for producing a semiconductor laser element as defined in claim 10 , wherein said thickness d 1 of said first layer adjacent to said semiconductor is 1-60 nm.
16. The method for producing a semiconductor laser element as defined in claim 10 , wherein a protective layer whose optical path length is determined by m·λ/2, where λ is oscillation wavelength, and m is a positive integer, is formed as a last layer of said multi-layered reflection film.
17. The method as defined in claim 10 , wherein said multi-layered reflection film comprises at least three or four layers.
18. The semiconductor laser element as defined in claim 1 , wherein the first layer comprises a thin film having a thickness of a short optical path length.