Semiconductor device having an ESD protection circuit
View Patent ↗When a manufacturing process becomes finer and a threshold value drops, a leakage current generates in a MOS transistor that is normally in an off-state. In order to suppress an influence of a leakage current that is generated in a protection transistor that constitutes a protection circuit on the internal circuit, an adjustor circuit that forms a transit path of the leakage current is disposed within the protection circuit, and a monitor circuit having the same circuit configuration as a configuration of the protection circuit is disposed to control an impedance of the transit path in the protection circuit and the monitor circuit so as to allow the leakage current to flow through the transit path.
1. A semiconductor device, comprising:
an internal circuit;
a protection circuit including a first protection transistor connected to an input terminal of said internal circuit and a first adjustor circuit connected to said input terminal in series with said first protection transistor;
a control circuit including, a monitor circuit having a second protection transistor and a second adjustor circuit connected in series with said second protection transistor, said control circuit providing a control signal for both said first and second adjustor circuits so that each of said first and second adjustor circuits represents a impedance to cancel each of leakage current of said first and second protection transistors.
2. The semiconductor device according to claim 1 , wherein said control circuit generates said control signal so that a potential of a joint of said second protection transistor and said second adjustor circuit keeps a reference voltage.
3. The semiconductor device according to claim 1 , wherein said first adjustor circuit includes a first compensation transistor connected in series with said first protection transistor, said second adjustor circuit includes a second compensation transistor connected in series with a second protection transistor and said control circuit provides said control signal with gate electrodes of said first and second protection transistors.
4. The semiconductor device according to claim 3 , wherein said first and second protection transistors are first conductivity type, said first and second compensation transistors are second conductivity type which is different from said first conductivity type.
5. The semiconductor device according to claim 4 , wherein said protection circuit further includes a third protection transistor connected in series with said first protection transistor, said monitor circuit further includes a fourth transistor connected in series with said second protection transistor, and said third and fourth protection transistor are said second conductivity type.
6. The semiconductor device according to claim 5 , wherein said first compensation transistor has a first gate width that is 1/10 or lower of a gate width of said third protection transistor and said second compensation transistor has said first gate width.
7. The semiconductor device according to claim 2 , wherein said control circuit further includes:
a reference voltage generating circuit generating said reference voltage; and
an operational amplifier comparing a potential of said joint of said second protection circuit and said second adjustor circuit with said reference voltage.
8. The semiconductor device according to claim 3 , wherein said first and second protection transistors have the same transistor size, and said first and second compensation transistors have the Same transistor size.
9. The semiconductor device according to claim 2 , said reference voltage comprises an intermediate voltage between a first power supply voltage and a second power supply voltage.
10. The semiconductor device according to claim 1 , wherein said internal circuit includes an oscillator circuit.
11. The semiconductor device according to claim 1 , wherein said internal circuit includes an operational amplifier.