IP Library Granted Patent US 7,911,050
Granted Patent B2
US 7,911,050 · App. 12/078,937 · Granted Mar 22, 2011

Semiconductor device and method for manufacturing the same

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,911,050
App. No.
12/078,937
Granted
Mar 22, 2011
Kind
B2
Abstract

A COF which can effectively dissipate the heat by using a simple structure and its manufacturing method. A semiconductor device of COF, which is formed over the main surface of a flexible substrate having no device hole and where a semiconductor chip is mounted over the inner lead interconnection, is characterized by forming a first resin layer over the second main surface of the flexible substrate opposite the side where the semiconductor chip is mounted and at the position corresponding to the semiconductor chip.

Claims (20)

1. A semiconductor device, comprising:

a semiconductor chip mounted over a first surface of a continuous flexible substrate,

wherein a first resin layer is formed over a second surface of said continuous flexible substrate opposite a side where the semiconductor chip is mounted and at a position corresponding to said semiconductor chip,

wherein a second resin layer is filled between said continuous flexible substrate and said semiconductor chip, and

wherein said first resin layer comprises a divided plurality of resins or a resin which has one or more slits.

2. A semiconductor device, comprising:

a semiconductor chip mounted over a first surface of a continuous flexible substrate,

wherein a first resin layer is formed over a second surface of said continuous flexible substrate opposite a side where the semiconductor chip is mounted and at a position corresponding to said semiconductor chip,

wherein a second resin layer is filled between said continuous flexible substrate and said semiconductor chip, and

wherein said first resin layer has a surface with roughness.

3. A semiconductor device, comprising:

a semiconductor chip mounted over a first surface of a continuous flexible substrate,

wherein a first resin layer is formed over a second surface of said continuous flexible substrate opposite a side where the semiconductor chip is mounted and at a position corresponding to said semiconductor chip,

wherein a second resin layer is filled between said continuous flexible substrate and said semiconductor chip, and

wherein said first resin layer has substantially the same size as said second resin layer.

4. A semiconductor device, comprising:

a semiconductor chip mounted over a first surface of a continuous flexible substrate,

wherein a first resin layer is formed over a second surface of said continuous flexible substrate opposite a side where the semiconductor chip is mounted and at a position corresponding to said semiconductor chip,

wherein a second resin layer is filled between said continuous flexible substrate and said semiconductor chip, and

wherein said first resin layer and said second resin layer include different materials have different fillers.

Assignments (2)
CHANGE OF NAME Recorded Nov 2, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025235/0497 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 8, 2008
From: NAKAJIMA, KEIICHI
To: NEC ELECTRONICS CORPORATION
Reel/Frame 020813/0756 →