Plasma inside vapor deposition apparatus and method for making multi-junction silicon thin film solar cell modules and panels

1 . A plasma inside vapor deposition apparatus for making silicon thin film solar cell modules comprising:

means for supporting a substrate, said substrate having an outer surface and an inner surface;

plasma torch means located proximal to said inner surface for depositing at least one thin film layer on said inner surface of said substrate, said plasma torch means located a distance from said substrate; and

means for supplying reagent chemicals to said plasma torch means, wherein said at least one thin film layer form said silicon thin film solar cell modules.

2 . The plasma inside vapor deposition apparatus for making silicon thin film solar cell modules of claim 1 , wherein said means for supporting comprises:

a movable platform for moving said substrate along its longitudinal axis relative to said plasma torch means.

3 . The plasma inside vapor deposition apparatus for making silicon thin film solar cell modules of claim 1 , wherein said means for supporting further comprises:

at least one rotatable chuck for rotating said substrate about its longitudinal axis relative to said plasma torch means.

4 . The plasma inside vapor deposition apparatus for making silicon thin film solar cell modules of claim 1 , further comprising:

a scribe located proximal to said inner surface for scribing interconnections in said at least one thin film layer to produce said silicon thin film solar cell modules.

5 . The plasma inside vapor deposition apparatus for making silicon thin film solar cell modules of claim 4 , wherein said scribe is a laser.

6 . The plasma inside vapor deposition apparatus for making silicon thin film solar cell modules of claim 4 , further comprising:

at least one injection nozzle located proximal to said outer surface for injecting one of a liquid and gas to control the temperature of the substrate.

7 . The plasma inside vapor deposition apparatus for making silicon thin film solar cell modules of claim 4 , wherein said apparatus is oriented in a substantially vertical position.

8 . The plasma inside vapor deposition apparatus for making silicon thin film solar cell modules of claim 4 , wherein said apparatus is oriented in a substantially horizontal position.

9 . The plasma inside vapor deposition apparatus for making silicon thin film solar cell modules of claim 1 wherein said plasma torch means is an inductively coupled plasma torch.

10 . A method for making silicon thin film solar cell modules comprising:

supporting a substrate, said substrate having an outer surface and an inner surface;

providing a high frequency induction coupled plasma torch comprising a coil, said induction coupled plasma torch being selected positionable along the surface area of said inner surface of said substrate;

introducing a plasma gas into said high frequency induction coupled plasma torch to form a plasma within said coil;

injecting at least one reagent chemicals into said high frequency induction coupled plasma torch; and

depositing at least one thin film layer on said inner surface of said substrate, wherein said at least one thin layer comprises said silicon thin film solar cell modules.

11 . The method for making silicon thin film solar cell modules of claim 10 , wherein said depositing at least one thin film layer further comprises:

reciprocating the substrate back and forth along its longitudinal axis relative to said high frequency induction coupled plasma torch.

12 . The method for making silicon thin film solar cell modules of claim 10 , wherein said depositing at least one thin film layer further comprises:

rotating the substrate about its longitudinal axis relative to said high frequency induction coupled plasma torch.

13 . The method for making silicon thin film solar cell modules of claim 10 , wherein said depositing at least one thin film layer further comprises:

scribing said at least one thin film layer for producing interconnections among said silicon thin film solar cell modules.

14 . The method for making silicon thin film solar cell modules of claim 10 , further comprising:

injecting one of a liquid and gas on the outer surface to control the temperature of the substrate.

15 . The method for making silicon thin film solar cell modules of claim 10 , further comprising:

depositing a thin layer of molybdenum on said inner surface prior to deposition of said at least one thin film layer.

16 . The method for making silicon thin film solar cell modules of claim 10 , wherein said depositing at least one thin film layer further comprises:

depositing a n-type doped silicon layer on said inner surface of said substrate.

17 . The method for making silicon thin film solar cell modules of claim 10 , wherein said depositing at least one thin film layer further comprises:

depositing a i-type doped silicon layer on said inner surface of said substrate.

18 . The method for making silicon thin film solar cell modules of claim 10 , wherein said depositing at least one thin film layer further comprises:

depositing a p-type doped silicon layer on said inner surface of said substrate.

19 . The method for making silicon thin film solar cell modules of claim 10 , wherein said at least one reagent chemicals is selected from the group consisting of SiCl 4 , SiH 4 , SiHCl 3 , SiF 4 , silicon containing compounds, PH 3 , B 2 H 6 , GeH 4 , GeCl 4 , GeF 4 , and germanium containing compounds.

20 . The method for making silicon thin film solar cell modules of claim 10 , wherein said reagent chemicals are in a form selected from the group consisting of a gas, vapor, aerosol, small particle, and powder.

21 . The method for making silicon thin film solar cell modules of claim 10 , wherein said depositing at least one thin film layer further comprises:

depositing a thin film layer of transparent conductive metal oxide on said inner surface of said substrate after the deposition of said at least one thin film layer.

22 . The method for making silicon thin film solar cell modules of claim 21 , wherein said transparent conductive metal oxide is an oxide selected from the group consisting of indium, tin, and zinc.

23 . The method for making silicon thin film solar cell modules of claim 10 , wherein said plasma gas is selected from the group consisting of helium, neon, argon, hydrogen, and mixtures thereof.

24 . The method for making silicon thin film solar cell modules of claim 10 , wherein said silicon thin film solar cell modules are selected from the group consisting of p-i-n and n-i-p type layered structures.

25 . The method for making silicon thin film solar cell modules of claim 10 , further comprising:

cutting said solar cell modules into smaller portions to be mounted on a substrate for producing a solar cell panel.

26 . A silicon thin film photovoltaic panel comprising:

a plurality of concave cylindrical portions of a silicon thin film solar cell module located adjacent to each other, and

interconnections between said plurality of concave cylindrical portions of a silicon thin film solar cell module for conducting electricity.

27 . The silicon thin film photovoltaic panel of claim 26 , wherein said silicon thin film solar cell modules are selected from the group consisting of p-i-n and n-i-p type layered structures.

28 . A silicon thin film photovoltaic panel comprising:

a plurality of disk portions of a silicon thin film solar cell module located adjacent to each other; and

interconnections between said plurality of disk portions of a silicon thin film solar cell module for conducting electricity.

29 . The silicon thin film photovoltaic panel of claim 28 , wherein said silicon thin film solar cell modules are selected from the group consisting of p-i-n and n-i-p type layered structures.