Method for fabricating an electronic device substrate
View Patent ↗An electronic device substrate is provided with a thin-plate core substrate; a metal electrode provided on the core substrate and electrically connected to an electrode of an electronic component to be packaged thereon; and an electrical insulation layer on which is mounted the electronic component, and which is provided to surround the metal electrode.
1. A method for fabricating an electronic device substrate, comprising:
forming an electrical insulation layer on one side of a core substrate, the core substrate comprising a carrier layer, a release layer, and a metal layer stacked therein;
forming an opening in the electrical insulation layer; and
forming a metal electrode in the opening.
2. The method for fabricating an electronic device substrate according to claim 1 , wherein:
the core substrate comprises a composite base material comprising the carrier layer, the release layer, and the metal layer.
3. The method for fabricating an electronic device substrate according to claim 2 , wherein:
the composite base material is integral with a support substrate.
4. The method for fabricating an electronic device substrate according to claim 3 , wherein:
the support substrate comprises an insulation film with an adhesive.
5. The method for fabricating an electronic device substrate according to claim 1 , wherein:
the electrical insulation layer is bonded to the core substrate by coating or pressure-welding.
6. The method for fabricating an electronic device substrate according to claim 1 , wherein:
the electrical insulation layer comprises a solder resist or a photo solder resist.
7. The method for fabricating an electronic device substrate according to claim 1 , wherein:
the core substrate comprises any of copper foil, stainless foil, aluminum or aluminum alloy foil, nickel or nickel alloy foil, or tin or tin alloy foil.
8. The method for fabricating an electronic device substrate according to claim 1 , wherein the release layer is located between the carrier layer and the metal layer.
9. The method for fabricating an electronic device substrate according to claim 1 , wherein the release layer is an inorganic release layer.
10. The method for fabricating an electronic device substrate according to claim 1 , wherein the release layer comprises copper.
11. The method for fabricating an electronic device substrate according to claim 10 , wherein the release layer is 18-35 μm thick.
12. The method for fabricating an electronic device substrate according to claim 1 , wherein the metal electrode comprises a substantially planar film.
13. The method for fabricating an electronic device substrate according to claim 1 , wherein the metal electrode comprises a plurality of laminated plating films.
14. The method for fabricating an electronic device substrate according to claim 1 , further comprising:
using the metal layer as an electrode to form a plating film,
wherein the metal electrode comprises the plating film.