Semiconductor device including barrier metal and coating film and method for manufacturing same
A semiconductor device includes an interconnection layer provided on a substrate, a first insulating film provided on the substrate, and on the interconnection layer so as to coat the interconnection layer, the first insulating film includes a silicon oxide film, a second insulating film provided on the first insulating film, the second insulating film includes either a silicon oxynitride film or a silicon nitride film, and an insulative coating film provided on the second insulating film.
1 . A semiconductor device comprising:
an interconnection layer provided on a substrate;
a first insulating film provided on the substrate, and on the interconnection layer so as to coat the interconnection layer, said first insulating film comprising a silicon oxide film;
a second insulating film provided on the first insulating film, the second insulating film comprising either a silicon oxynitride film or a silicon nitride film; and
an insulative coating film provided on the second insulating film.
2 . The semiconductor device according to claim 1 , wherein the interconnection layer includes:
an interconnection metal; and
a barrier metal layer disposed between the interconnection metal, and the first insulating film.
3 . The semiconductor device according to claim 2 , wherein the barrier metal layer comprises a film containing titanium.
4 . The semiconductor device according to claim 1 , further comprising:
an interconnection gap formed as an interval between interconnection layers adjacent to each other,
wherein the interconnection gap has an aspect ratio as expressed by b/a, of not less than 1.4, provided that the interval between the interconnection layers adjacent to each other is a, and a height of the interconnection layer is b.
5 . The semiconductor device according to claim 4 , wherein the first insulating film has a thickness in a range of 10 to 50 nm.
6 . The semiconductor device according to claim 4 , wherein the second insulating film has a thickness in a range of 10 to 100 nm.
7 . The semiconductor device according to claim 1 , wherein the insulative coating film comprises an HSQ (hydrogen silsesquioxane) film.
8 . The semiconductor device according to claim 1 , further comprising:
a third insulating film provided on the coating film.
9 . The semiconductor device according to claim 8 , wherein the third insulating film comprises either a silicon oxynitride film or a silicon nitride film.
10 . The semiconductor device according to claim 4 , wherein the interconnection gap having the aspect ratio of not more than 1.8 is effectively filled up with the coating film.
11 . A method of manufacturing a semiconductor device, comprising:
forming an interconnection layer over a substrate;
forming a first insulating film on the substrate, and on the interconnection layer to coat the interconnection layer, the first insulating film comprising a silicon oxide film;
forming a second insulating film on the first insulating film, the second insulating film comprising either a silicon oxynitride film or a silicon nitride film; and
forming a coating film on the second insulating film.
12 . The method according to claim 11 , wherein the forming of the interconnection layer includes:
forming an interconnection metal; and
forming a barrier metal layer.
13 . The method according to claim 12 , wherein the barrier metal layer comprises a film containing titanium.
14 . The method according to claim 11 , wherein in the forming of the interconnection layer, an interconnection gap as an interval between interconnection layers adjacent to each other, such that the interconnection gap has an aspect ratio as expressed by b/a, of not less than 1.4, provided that the interval between the interconnection layers adjacent to each other is a, and a height of the interconnection layer is b.
15 . The method according to claim 14 , wherein the first insulating film has a thickness in a range of 10 to 50 nm.
16 . The method according to claim 14 , wherein the second insulating film has a thickness in a range of 10 to 100 nm.
17 . The method according to claim 11 , wherein the coating film is an HSQ (hydrogen silsesquioxane) film.
18 . The method according to claim 11 , further comprising:
forming a third insulating film on the coating film.
19 . The method according to claim 18 , wherein the third insulating film comprises either a silicon oxynitride film, or a silicon nitride film.
20 . The method according to claim 14 , wherein in the forming of the coating film by the coating method, the coating film is formed so as to effectively fill up the interconnection gap having the aspect ratio of not more than 1.8.
21 . A semiconductor device, comprising:
a plurality of interconnection layers formed on a substrate, said interconnection layers being arranged to have an interval between one another, an interconnection layer of said plurality of interconnection layers including a metal wiring layer and a barrier metal provided to said metal wiring layer, said barrier metal having potential to react with a hydroxyl group;
a first insulating film formed on said substrate, side and top surfaces of said interconnection layers, to form first concaves provided between the respective adjacent interconnection layers, said first insulating film having potential to produce said hydroxyl group with a reaction relating to H + ;
a second insulating film formed on said first insulating film to form second concaves provided between the respective adjacent interconnection layers, to prevent said H + from approaching said first insulating film; and
a coating film formed on said second insulating film to fill said second concaves, said coating film having potential to produce the H + by a reaction relating to H 2 O.