Semiconductor device having vertical MOSFET
View Patent ↗An ON-resistance of a semiconductor device including a vertical MOSFET whose source electrode, gate electrode, and drain electrode are formed on a single surface is reduced. A drift region which is lower in impurity concentration than a drain region is formed over the drain region. A gate trench and a drain contact trench are simultaneously formed in the drift region. A gate insulating film and a gate electrode are formed in the gate trench. A drain electrode is formed in the drain contact trench. A drain contact region which is higher in impurity concentration than the drift region is formed immediately under the drain contact trench.
1. A semiconductor device, comprising:
a semiconductor region of a first conductivity type;
a first trench and a second trench which are formed in the semiconductor region;
a channel region of a second conductivity type which is formed in the semiconductor region;
a source region of the first conductivity type which is formed in the channel region,
wherein the first trench includes a gate insulating film and a gate electrode which are formed therein, and
the second trench has a depth that is substantially equal to the first trench, and includes a drain electrode formed therein; and
a third trench formed in a part of the semiconductor region located immediately under the second trench,
wherein a part of the drain electrode is formed in the third trench.
2. The semiconductor device according to claim 1 , further comprising a diffusion region of the first conductivity type which has a higher concentration than the semiconductor region and is formed in a part of the semiconductor region located immediately under the second trench.
3. The semiconductor device according to claim 1 , further comprising:
an interlayer insulating film which is formed above the channel region and the source region and in the second trench; and
a fourth trench formed in the interlayer insulating film and exposing the source region and the channel region,
wherein the third trench is formed in the interlayer insulating film that is formed in the second trench, and
the third trench and the fourth trench are substantially equal in depth to each other.
4. The semiconductor device according to claim 3 , further comprising a diffusion region of the first conductivity type which has a higher concentration than the semiconductor region and is formed in a part of the semiconductor region located immediately under the third trench.
5. The semiconductor device according to claim 1 , further comprising:
a gate lead wiring electrically connected with the gate electrode; and
an annular conductive layer provided outside the gate electrode and the gate lead wiring,
wherein the annular conductive layer is electrically connected with the drain electrode.
6. The semiconductor device according to claim 5 , further comprising an annular diffusion region of the second conductivity type which is provided outside the gate electrode and the gate lead wiring in a plan view.
7. The semiconductor device according to claim 1 , further comprising an annular diffusion region of the second conductivity type which is provided outside the gate electrode and a gate lead wiring in a plan view.
8. The semiconductor device according to claim 7 , wherein the drain electrode is annularly formed and the annular diffusion region is electrically connected with the annularly formed drain electrode.
9. The semiconductor device according to claim 1 , wherein the semiconductor region comprises an epitaxial layer which is formed on a semiconductor body of the first conductivity type, the semiconductor body having a higher concentration than the semiconductor region.
10. The semiconductor device according to claim 1 , further comprising:
an external source terminal electrically connected with the source region;
an external gate terminal electrically connected with the gate electrode; and
an external drain terminal electrically connected with the drain electrode,
wherein the external source terminal, the external gate terminal and the external drain terminal are formed on a same surface of the semiconductor device.