Light emitting diode and method for manufacturing the same
The present invention relates to a light emitting diode ( 100, 109 ), comprising at least one p-doped structure, a plurality of n-doped zinc-oxide (ZnO) nanowires ( 104 ) arranged on the at least one p-doped structure, thereby forming a plurality of p-n junctions ( 107 a, 107 b ), an insulating structure ( 105 ) arranged among the plurality of ZnO-nanowires ( 104 ), to electrically separate the plurality of p-n junctions ( 107 a, 107 b ), and a transparent conductive layer ( 106 ), arranged on the at least one insulating structure ( 105 ) and in electrical contact with the plurality of ZnO-nanowires ( 104 ), to enable application of a voltage over the plurality of p-n junctions ( 107 a, 107 b ), thereby enabling emission of light. An advantage with the above light emitting diode ( 100, 109 ) is its improved broadband spectral distribution. Furthermore, as ZnO-nanowires ( 104 ) are used, it is possible to achieve a high brightness.
1. A light emitting diode (LED), for broadband emission of light having a wavelength between 200 nm and 700 nm, comprising:
at least one p-doped structure;
a plurality of low-temperature growth n-doped zinc-oxide (ZnO) nanowires that are uniformly doped on the at least one p-doped structure, thereby forming a plurality of p-n junctions;
at least one insulating structure arranged among the plurality of low-temperature growth n-doped ZnO-nanowires that are uniformly doped, to electrically separate the plurality of p-n junctions; and
a transparent conductive layer, arranged on the at least one insulating structure and in electrical contact with the plurality of low-temperature growth n-doped ZnO-nanowires that are uniformly doped, to enable application of a voltage over the plurality of p-n junctions, thereby enabling emission of light.
2. The light emitting diode according to claim 1 , wherein the at least one p-doped structure is a p-doped layer.
3. The light emitting diode according to claim 2 , wherein at least one of the plurality of low-temperature growth n-doped zinc-oxide ZnO-nanowires that are uniformly doped is not perpendicular to the p-doped layer.
4. The light emitting diode according to claim 1 , wherein the at least one insulating structure is a transparent insulating structure being-transparent for light having a wavelength of 200 nm to 700 nm.
5. The light emitting diode according to claim 1 , wherein the at least one insulating structure is selected from a group comprising spin on-glass (SOG), polymethylmethacrylate (PMMA), Si02, and epoxy resin.
6. The light emitting diode according to claim 1 , further comprising:
a conductor arranged in electrical contact with the at least one p-doped structure.
7. The light emitting diode according to claim 6 , wherein the conductor is a conductive layer.
8. The light emitting diode claim 1 , wherein the at least one insulating structure is constituted by a plurality of sandwiched transparent insulating layers.
9. The light emitting diode according to claim 1 , wherein the at least one p-doped structure comprises a plurality of p-doped structures constituted by a plurality of p-doped ZnO-nanowires arranged in contact with the plurality of low temperature growth n-doped ZnO-nanowires that are uniformly doped, thereby forming the plurality of p-n junctions.
10. The light emitting diode according to claim 1 , wherein the transparent conductive layer is selected from a group comprising Indium Tin Oxide (ITO), a thin metal layer, and an alloy.
11. An illumination system, comprising a controller, a power supply and the light emitting diode according to claim 1 .
12. The light emitting diode according to claim 1 , wherein the plurality of low-temperature growth n-doped ZnO-nanowires that are uniformly doped limit inter-diffusion between the at least one p-doped structure and the plurality of low-temperature growth n-doped zinc-oxide ZnO-nanowires that are uniformly doped at the plurality of p-n junctions.
13. The light emitting diode according to claim 1 , wherein a height of the plurality of low-temperature growth n-doped ZnO-nanowires is approximately 1 μm.
14. The light emitting diode according to claim 13 , wherein an average diameter of the plurality of low-temperature growth n-doped ZnO-nanowires is in a range of 100-200 nm.
15. The light emitting diode according to claim 1 , wherein an average diameter of the plurality of low-temperature growth n-doped ZnO-nanowires is in a range of 100-200 nm.
16. A method for manufacturing a light emitting diode configured for broadband emission of light having a wavelength between 200 nm and 700 nm comprising:
arranging at least one p-doped structure on a substrate;
forming a plurality of low temperature growth n-doped zinc-oxide (ZnO) nanowires that are uniformly doped on the at least one p-doped structure, thereby forming a plurality of p-n junctions;
arranging at least one insulating structure among the plurality of low temperature growth n-doped ZnO-nanowires that are uniformly doped, to electrically separate the plurality of p-n junctions; and
arranging a transparent conductive layer on the at least one insulating structure and in electrical contact with the plurality of low temperature growth n-doped ZnO-nanowires that are uniformly doped, to enable application of a voltage over the plurality of p-n junctions, thereby enabling emission of light.
17. The method according to claim 16 , wherein the step of arranging the at least one insulating structure comprises:
arranging at least two insulating layers on top of each other before the step of arranging the transparent conductive layer.
18. The method according to claim 16 , wherein the at least one insulating structure is a transparent insulating structure-selected from a group comprising spin-on-glass (SOG), polymethylmethacrylate (PMMA), Si02, and epoxy resin.
19. The method according to claim 16 , further comprising:
arranging a conductor in electrical contact with the at least one p-doped structure.
20. The method according to claim 16 , wherein the plurality of low-temperature growth n-doped zinc-oxide zinc-oxide ZnO-nanowires that are uniformly doped limit inter-diffusion between the at least one p-doped structure and the plurality of low-temperature growth zinc-oxide ZnO-nanowires that are uniformly doped at the plurality of p-n junctions.
21. The light emitting diode according to claim 16 , wherein the at least one p-doped structure is a p-doped layer.
22. The light emitting diode according to claim 21 , wherein at least one of the plurality of low-temperature growth n-doped ZnO-nanowires that are uniformly doped is not perpendicular to the p-doped layer.
23. The method according to claim 16 , wherein a height of the plurality of low-temperature growth n-doped ZnO-nanowires is approximately 1 μm.
24. The method according to claim 23 , wherein an average diameter of the plurality of low-temperature growth n-doped ZnO-nanowires is in a range of 100-200 nm.
25. The method according to claim 16 , wherein an average diameter of the plurality of low-temperature growth n-doped ZnO-nanowires is in a range of 100-200 nm.