IP Library Granted Patent US 8,501,599
Granted Patent B2
US 8,501,599 · App. 12/087,479 · Granted Aug 6, 2013

Substrate processing apparatus and substrate processing method

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Quick Facts
Patent No.
US 8,501,599
App. No.
12/087,479
Granted
Aug 6, 2013
Kind
B2
Abstract

A substrate processing apparatus has: a process chamber in which a substrate is processed; a heating device that optically heats the substrate accommodated in the process chamber from an outer periphery side of the substrate; a cooling device that cools the outer periphery side of the substrate by flowing a fluid in a vicinity of an outer periphery of the substrate optically heated by the heating device; a temperature detection portion that detects a temperature inside the process chamber; and a heating control portion that controls the heating device and the cooling device in such a manner so as to provide a temperature difference between a center portion of the substrate and an end portion of the substrate while maintaining a temperature at the center portion at a pre-determined temperature according to the temperature detected by the temperature detection portion.

Claims (64)

1. A substrate processing apparatus, comprising:

an outer tube in which a substrate is processed;

a heating device that optically heats the substrate accommodated in the outer tube from an outer periphery side of the substrate;

a cooling device that cools the outer periphery side of the substrate by flowing a fluid outside an inner wall of the outer tube;

a temperature detection portion that detects a temperature inside the outer tube; and

a heating control portion that controls the heating device and the cooling device in such a manner so as to provide a temperature difference between a center portion of the substrate and an end portion of the substrate while maintaining a temperature at the center portion at a pre-determined temperature according to the temperature detected by the temperature detection portion.

2. The substrate processing apparatus according to claim 1 , wherein the cooling device comprises:

a cooling gas channel provided outside of the inner wall of the outer tube to flow a cooling gas therein;

an exhaust channel to introduce therein the cooling gas flowing through the cooling gas channel so as to be exhausted; and

an exhaust portion provided to the cooling channel to exhaust the cooling gas.

3. The substrate processing apparatus according to claim 1 , wherein:

the pre-determined temperature is a constant temperature.

4. The substrate processing apparatus of claim 1 , wherein

the cooling device cools the outer periphery side of the substrate by flowing the fluid inside an outer wall of the outer tube.

5. The substrate processing apparatus according to claim 1 , further comprising:

a temperature acquiring portion that acquires temperatures at the center portion and the end portion of the substrate;

a correlation acquiring portion that acquires a correlation of a preset temperature and a flow rate of the fluid with a temperature deviation between the center portion and the outer periphery side of the substrate in a case where an amount of the fluid flown by the cooling device is varied while the heating device is heating the substrate; and

a preset temperature correction portion that corrects the preset temperature of the heating portion according to the correlation acquired by the correlation acquiring portion.

6. The substrate processing apparatus according to claim 1 , further comprising:

a process gas introducing portion that introduces a process gas inside the outer tube; and

a process gas flow rate control portion that controls a flow rate of the process gas introduced from the process gas introducing portion,

wherein the process gas flow rate control portion controls the process gas to be introduced inside the outer tube from the process gas introducing portion while the heating control portion is performing control in such a manner so as to provide the temperature difference between the center portion of the substrate and the end portion of the substrate while maintaining the temperature at the center portion at the pre-determined temperature.

7. The substrate processing apparatus according to claim 1 , wherein

the temperature detection portion detects the temperatures of the center portion of the substrate, of the outer periphery side of the substrate, and inside the outer tube, and

the heating control portion controls the heating device and the cooling device so that the temperature of the outer periphery side of the substrate becomes lower than the temperature of the center portion of the substrate while maintaining a temperature at the center portion of the substrate at a pre-determined temperature, based on the detected temperatures of the center portion of the substrate, of the outer periphery side of the substrate, and inside the outer tube.

8. The substrate processing apparatus according to claim 2 , wherein

the exhaust portion includes plural exhaust devices having different exhaust amounts, and

the heating control portion controls the plural exhaust devices separately.

9. The substrate processing apparatus according to claim 5 , wherein:

the correlation acquiring portion further acquires a correlation of the preset temperature and the flow rate of the fluid with the temperature detected by the temperature detection portion in a case where the amount of the fluid flown by the cooling device is varied while the heating device is heating the substrate; and

the preset temperature correction portion corrects the preset temperature of the heating device according to the correlation acquired by the correlation acquiring portion.

10. The substrate processing apparatus according to claim 5 , wherein:

the pre-determined temperature is a constant temperature.

11. The substrate processing apparatus according to claim 6 , wherein

the substrate inside the outer tube is provided in a plural form and aligned at pre-determined intervals; and

the process gas introduced inside the outer tube from the process gas introducing portion is supplied to each substrate from the outer periphery side.

12. A substrate processing method, comprising:

optically heating a substrate accommodated in an outer tube from an outer periphery side of the substrate by a heating device;

cooling the outer periphery side of the substrate by a cooling device that flows a fluid outside an inner wall of the outer tube;

detecting a temperature inside the outer tube; and

controlling the heating device and the cooling device in such a manner so as to provide a temperature difference between a center portion of the substrate and an end portion of the substrate while maintaining a temperature at the center portion at a pre-determined temperature according to the temperature that has been detected.

13. The substrate processing method of claim 12 , wherein

the pre-determined temperature is a constant temperature.

14. The substrate processing method of claim 12 , further comprising:

processing the substrate by introducing a process gas inside the outer tube in a state where the temperature difference is provided between the center portion of the substrate and the end portion of the substrate while the temperature at the center portion is maintained at the pre-determined temperature.

15. The substrate processing method of claim 12 , further comprising:

acquiring a correlation of a preset temperature and a flow rate of the fluid with a temperature deviation between the center portion and the outer periphery side of the substrate when an amount of the fluid flown by the cooling device is varied while the heating device is heating the substrate; and

correcting the preset temperature of the heating portion according to the correlation that has been acquired,

wherein the heating device and the cooling device are controlled according to the temperature which is the detected temperature that has been corrected.

16. The substrate processing method of claim 12 , wherein

the detecting the temperature includes detecting the temperatures of the center portion of the substrate, of the outer periphery side of the substrate, and inside the outer tube, and

the controlling includes controlling the heating device and the cooling device so that the temperature of the outer periphery side of the substrate becomes lower than the temperature of the center portion of the substrate while maintaining a temperature at the center portion of the substrate at a pre-determined temperature, based on the detected temperatures of the center portion of the substrate, of the outer periphery side of the substrate, and inside the outer tube.

17. The substrate processing method of claim 14 , further comprising:

supplying the process gas introduced inside the outer tube to the substrate provided in a plural form and aligned at pre-determined intervals from the outer periphery side.

18. The substrate processing method of claim 15 , further comprising:

acquiring a correlation of a preset temperature and a flow rate of the fluid with the temperature that has been detected when an amount of the fluid flown by the cooling device is varied while the heating device is heating the substrate; and

correcting the preset temperature of the heating device according to the correlation that has been acquired,

wherein the heating device and the cooling device are controlled according to the temperature which is the detected temperature that has been corrected.

19. A substrate processing method, comprising:

optically heating a substrate accommodated in an outer tube from an outer periphery side of the substrate by a heating device;

cooling the outer periphery side of the substrate by flowing a fluid outside an inner wall of the outer tube;

exhausting the fluid by plural exhaust devices having different exhaust amounts;

detecting a temperature inside the outer tube; and

controlling the heating device and the plural exhaust devices separately in such a manner so as to provide a temperature difference between a center portion of the substrate and an end portion of the substrate while maintaining a temperature at the center portion at a pre-determined temperature according to the temperature that has been detected.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 31, 2018
From: HITACHI KOKUSAI ELECTRIC INC.
To: KOKUSAI ELECTRIC CORPORATION
Reel/Frame 048008/0206 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2008
From: UENO, MASAAKI; SHIMADA, MASAKAZU; HANASHIMA, TAKEO; MORIKAWA, HARUO; HAYASHIDA, AKIRA
To: HITACHI KOKUSAI ELECTRIC INC.
Reel/Frame 021546/0582 →