Surface-emission laser diode, surface-emission laser diode array, optical scanning apparatus and image forming apparatus
A surface-emission laser diode of a vertical-cavity surface-emission laser structure includes a substrate and a mesa structure formed on the substrate, the mesa structure including therein a current confinement structure, wherein the current confinement structure includes a conductive current confinement region and an insulation region surrounding the conductive current confinement region, the insulation region being an oxide of a semiconductor material forming the conductive current confinement region, and wherein a center of the current confinement region is offset from a center of the mesa structure in a plane perpendicular to a laser oscillation direction.
1. A surface-emission laser diode of a vertical-cavity surface-emission laser structure, comprising:
a substrate; and
a mesa structure formed over said substrate,
said mesa structure including therein a current confinement structure,
said current confinement structure including a conductive current confinement region and an insulation region surrounding said conductive current confinement region, said insulation region being an oxide of a semiconductor material forming said conductive current confinement region,
wherein a center of said current confinement region is offset from a center of said mesa structure in a plane perpendicular to a laser oscillation direction with a distance of 0.5 μm or more.
2. The surface-emission laser diode as claimed in claim 1 , wherein said substrate is an inclined substrate.
3. The surface-emission laser diode as claimed in claim 2 , wherein said semiconductor material constituting said conductive current confinement region shows anisotropy of oxidation rate.
4. The surface-emission laser diode as claimed in claim 2 , wherein said inclined substrate is a mirror polished surface, a normal direction to said mirror polished surface being included in a first plane that includes [100] crystal orientation and a [111] crystal orientation.
5. The surface-emission laser diode as claimed in claim 4 , wherein said center of said current confinement region is offset from said center of said mesa structure in a direction of an intersection line formed by said mirror polished surface and said first plane.
6. The surface-emission layer diode as claimed in claim 1 , wherein there is formed an upper electrode having an aperture on said mesa structure, and wherein a center of said aperture is coincident to said center of said conductive current confinement region with regard to said laser oscillation direction.
7. A surface-emission laser diode array, comprising a plurality of surface-emission laser diodes formed on a substrate, each of said surface-emission laser diodes comprising:
a mesa structure formed on said substrate,
said mesa structure including therein a current confinement structure,
said current confinement structure including a conductive current confinement region and an insulation region surrounding said conductive current confinement region, said insulation region being an oxide of a semiconductor material forming said conductive current confinement region,
wherein a center of said current confinement region is offset from a center of said mesa structure in a plane perpendicular to a laser oscillation direction with a distance of 0.5 μm or more.
8. The surface-emission laser diode array as claimed in claim 7 , wherein an offset amount and an offset direction of said center of said conductive confinement region with regard to said center of said mesa structure are common throughout said plurality of surface-emission laser diodes.
9. An image forming apparatus forming an image on an object with a plurality of optical beams produced by a surface-emission laser diode array, said surface-emission laser diode array including a plurality of surface-emission laser diodes each comprising:
a substrate; and
a mesa structure formed on said substrate,
said mesa structure including therein a current confinement structure,
said current confinement structure including a conductive current confinement region and an insulation region surrounding said conductive current confinement region, said insulation region being an oxide of a semiconductor material forming said conductive current confinement region,
wherein a center of said current confinement region is offset from a center of said mesa structure in a plane perpendicular to a laser oscillation direction with a distance of 0.5 μm or more.
10. The surface-emission laser diode as claimed in claim 1 , wherein said center of said current confinement region is offset from said center of said mesa structure with a distance such that there is attained anisotropy of optical gain and a polarization plane of an electric field of an oscillation light is stabilized.
11. The surface-emission laser diode as claimed in claim 1 , wherein the offset as between the center of said current confinement region and the center of said mesa structure is 2 μm or more.