IP Library Granted Patent US 7,962,868
Granted Patent B2
US 7,962,868 · App. 12/091,695 · Granted Jun 14, 2011

Method for forming a semiconductor device using optical proximity correction for the optical lithography

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Quick Facts
Patent No.
US 7,962,868
App. No.
12/091,695
Granted
Jun 14, 2011
Kind
B2
Abstract

A method for forming a semiconductor device includes performing a first optimization of a first edge location of a feature fragment, wherein the first optimization has a first speed per fragment, and performing a second optimization of a second edge location of the feature fragment, wherein the second optimization has a second speed per fragment that is slower than the first speed per fragment. Next, a result of the second optimization is used to form a reticle pattern; and a layer on a semiconductor wafer is patterned using the reticle pattern.

Claims (32)

1. A method for forming a semiconductor device, the method comprising:

performing a first optimization of a first edge location of a feature fragment, wherein the first optimization has a first speed per fragment;

performing a second optimization of a second edge location of the feature fragment, wherein:

the second edge location is part of a result of the first optimization;

the second optimization is performed after the first optimization; and

the second optimization has a second speed per fragment that is slower than the first speed per fragment;

using a result of the second optimization to form a reticle pattern; and

using the reticle pattern to form a device feature over a semiconductor wafer.

2. The method of claim 1 , further including:

setting an initial run condition, a first simulation condition, and a second simulation condition, wherein the initial run condition and the first simulation condition are used in performing the first optimization;

setting an optimization condition prior to performing the first optimization;

determining if the optimization condition is met after performing the first optimization;

when the optimization condition is not met, setting a new run condition, wherein the new run condition and the first simulation condition are used in performing the first optimization; and

when the optimization condition is met, using the new run condition and the second simulation condition in performing the second optimization.

3. The method of claim 2 , wherein the initial run condition is selected from the group consisting of a first movement condition and a first discretization condition.

4. The method of claim 2 , wherein the optimization condition is an error condition.

5. The method of claim 2 , wherein setting a new run condition includes choosing a new run condition from a predetermined list of run conditions.

6. The method of claim 2 , wherein the second optimization has a slower run time than the first optimization.

7. The method of claim 2 , wherein one of the first optimization and the second optimization includes moving fragment edges parallel to the edge of the feature.

8. The method of claim 2 , wherein the first optimization includes a first predetermined number of iterations and the second optimization includes a second predetermined number of iterations.

9. The method of claim 8 , wherein the first predetermined number is greater than the second predetermined number.

10. The method of claim 2 , wherein the first simulation condition is selected from a group consisting of a first optical model radius, and a first number of simulation kernels, and the second simulation condition is selected from the group consisting of a second optical model radius, and a second number of simulation kernels, wherein the first optical model radius is different than the second optical model radius, and the first number of simulation kernels is different than the second number of simulation kernels.

11. The method of claim 1 , wherein the second optimization has a slower run time than the first optimization.

12. The method of claim 11 , wherein one of the first optimization and the second optimization includes moving fragment edges parallel to the edge of the feature.

13. The method of claim 12 , wherein the first simulation condition is selected from a group consisting of a first optical model radius, and a first number of simulation kernels, and the second simulation condition is selected from the group consisting of a second optical model radius, and a second number of simulation kernels, wherein the first optical model radius is different than the second optical model radius, and the first number of simulation kernels is different than the second number of simulation kernels.

14. The method of claim 11 , wherein the first simulation condition is selected from a group consisting of a first optical model radius, and a first number of simulation kernels, and the second simulation condition is selected from the group consisting of a second optical model radius, and a second number of simulation kernels, wherein the first optical model radius is different than the second optical model radius, and the first number of simulation kernels is different than the second number of simulation kernels.

15. The method of claim 1 , wherein one of the first optimization and the second optimization includes moving fragment edges parallel to the edge of the feature.

16. The method of claim 15 , wherein the first optimization includes a first predetermined number of iterations and the second optimization includes a second predetermined number of iterations.

17. The method of claim 1 , wherein the first optimization includes a first predetermined number of iterations and the second optimization includes a second predetermined number of iterations.

18. The method of claim 17 , wherein the first predetermined number is greater than the second predetermined number.

19. The method of claim 1 , wherein the first simulation condition is selected from a group consisting of a first optical model radius, and a first number of simulation kernels, and the second simulation condition is selected from the group consisting of a second optical model radius, and a second number of simulation kernels, wherein the first optical model radius is different than the second optical model radius, and the first number of simulation kernels is different than the second number of simulation kernels.

20. The method of claim 19 , wherein the first optimization includes a first predetermined number of iterations and the second optimization includes a second predetermined number of iterations.

Assignments (31)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
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CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
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To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
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From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
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To: NXP USA, INC.
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CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR INC.
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RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
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RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
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To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
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To: MORGAN STANLEY SENIOR FUNDING, INC.
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SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
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