Capacitor element manufacturing jig and capacitor element manufacturing method
View Patent ↗The invention relates to a jig for producing capacitor elements, which is formed of resin material and is used for accommodate a plurality of capacitor element substrates therein to thereby batch-process the substrates. The jig is characterized in that portions of the jig at which the jig is supported during the process are protected with metal material. According to the invention, a group of capacitors each having a semiconductor layer serving as one electrode can be simultaneously produced with narrow variety in capacitance and with good precision, repeatedly, by using the jig having a high durability.
1. A jig for producing capacitor elements, the jig being made of a resin material, which jig simultaneously accommodates a plurality of capacitor element substrates and processes the substrates, wherein the jig contains parts that support the jig during the processing, and these parts are protected with a metal material,
wherein the jig has a long-plate form and the parts for supporting the jig are on both ends in the longitudinal direction or in the vicinity of the ends, and
wherein the metal material is in the form of a cylinder which covers a part of the jig including the supporting portions of the resin material, which cylinder may have a cleavage groove in part.
2. The jig for producing capacitor elements according to claim 1 , wherein the protecting metal material is fixed to the resin material by making use of its resilience.
3. The jig for producing capacitor elements according to claim 1 , which has at least part of an electric circuit for applying electric current to each capacitor element substrate.
4. A method for producing capacitor element, using the jig for producing capacitor elements described in claim 1 .
5. The jig for producing capacitor elements according to claim 1 , wherein the resin material is glass-epoxy resin.
6. The method for producing capacitor element according to claim 4 , wherein in a solution for forming a semiconductor layer, a semiconductor layer is formed on substrates for capacitor elements each having a dielectric layer thereon connected with the jig for producing capacitor elements by applying electric current with the capacitor element substrates being used as anode and an electrode provided in the solution for forming a semiconductor layer being used as cathode.