Nanoamorphous carbon-based photonic crystal infrared emitters

1. A tunable radiation emitting structure comprising:

a nanoamorphous carbon structure having a plurality of relief features provided in a periodic spatial configuration, wherein the relief features are separated from each other by adjacent recessed features, and wherein the nanoamorphous carbon comprises a total of from 0 to 60 atomic percent of one or more dopants of the dopant group consisting of: transition metals, lanthanoids, their electro-conductive carbides, silicides and nitrides.

2. The structure of claim 1 , wherein a dopant is selected from the group consisting of: Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La and other lanthanides, Hf, Ta, W, Rh, Os, Ir, Pt, Au, Hg, electro-conductive carbides, silicides and nitrides.

3. The structure of claim 1 , wherein a dopant is selected from the group consisting of: gold, silver, copper, iron, iridium, tungsten, molybdenum, nickel, vanadium, chromium, titanium, and TiN.

4. The structure of claim 1 , wherein the nanoamorphous carbon contains a total of from 5 to 25 atomic percent of dopants.

5. The structure of claim 1 , wherein the nanoamorphous carbon contains a total of from 25 to 35 atomic percent of dopants.

6. The structure of claim 1 , wherein the center wavelength of emission is selected by changing the distance between relief features.

7. The structure of claim 1 , wherein the relief features form a photonic crystal structure.

8. The structure of claim 1 , wherein the width of the emission is selected by changing the refractive index of the nanoamorphous carbon.

9. The structure of claim 1 , wherein the conductivity is selected from 10 −10 S/cm to 10 3 S/cm.

10. The structure of claim 1 , wherein the distance between relief features is from 1.5 microns to 10 microns.

11. The structure of claim 1 , wherein the distance between relief features is 1.5 microns.

12. The structure of claim 1 , wherein the center wavelength of emission is in the infrared wavelength range.

13. The structure of claim 1 , wherein the center wavelength of emission is between 0.750 microns to 1000 microns.

14. The structure of claim 1 , wherein the center wavelength of emission is between 1-12 microns.

15. The structure of claim 1 , wherein the center wavelength of emission is selected from 1-3 microns, 3-5 microns and 8-12 microns.

16. The structure of claim 1 , wherein the width of emission is between 10 and 100 nm, 100-500 nm and 500 nm-1 micron.

17. The structure of claim 1 , formed by plasma enhanced chemical vapor deposition on a template.

18. The structure of claim 1 , wherein the template is lithographically or multibeam interference patterned SU-8.

19. The structure of claim 1 , wherein the template is a photoresist that has been patterned by either or one or two-photon lithography, or an oxide that has been previously infiltrated within a photoresist template and can be dissolved by a strong acid.

20. A method of light emission, comprising:

applying radiational energy to a structure of claim 1 .

21. The method of claim 20 wherein the radiational energy is heat.

22. The method of claim 20 , wherein the radiational energy is supplied by application of electric current resulting in Ohm heating.

23. The method of claim 20 , wherein the structure is heated to above 300° C.

24. The method of claim 20 , wherein the structure is heated to above 500° C.