IP Library Granted Patent US 8,076,260
Granted Patent B2
US 8,076,260 · App. 12/098,724 · Granted Dec 13, 2011

Substrate structure and manufacturing method of the same

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Quick Facts
Patent No.
US 8,076,260
App. No.
12/098,724
Granted
Dec 13, 2011
Kind
B2
Abstract

After a titanium nitride (TiN) thin film is formed on a silicon substrate, cobalt (Co) fine particles and nickel (Ni) fine particles are deposited in a mixed state on the titanium nitride (TiN) thin film, and CNTs are sequentially grown from the cobalt (Co) fine particles and the nickel fine particles by varying growth conditions.

Claims (36)

1. A substrate structure, comprising:

a substrate;

a base material formed in a region above said substrate;

a catalytic material formed in the region; and

a linear structure made of a carbon element and formed on said catalytic material,

wherein said catalytic material contains at least first catalytic fine particles made of a first catalytic material and second catalytic fine particles made of a second catalytic material different from said first catalytic material; and

wherein said linear structure is formed from each of the first and second catalytic fine particles.

2. The substrate structure according to claim 1 ,

wherein the respective catalytic fine particles contain at least one kind of metal selected from the metal group consisting of iron (Fe), nickel (Ni), cobalt (Co), gold (Au), silver (Ag), and copper (Cu), or at least one kind of alloy selected from the alloy group consisting of alloys composed of two kinds or more of iron (Fe), nickel (Ni), cobalt (Co), gold (Au), silver (Ag), and copper (Cu).

3. The substrate structure according to claim 1 ,

wherein the respective catalytic fine particles are formed of the same material.

4. The substrate structure according to claim 1 ,

wherein the respective catalytic fine particles differ in sizes from each other.

5. The substrate structure according to claim 1 ,

wherein the respective catalytic fine particles have an average value of diameters controlled to fall within a range of 1 to 30 nm, and a standard deviation of a diameter distribution controlled to be within 1.5.

6. The substrate structure according to claim 1 ,

wherein said base material contains at least one kind selected from the group consisting of titanium (Ti), tantalum (Ta), titanium nitride (TiN), tantalum nitride (TaN), aluminum (Al), hafnium nitride (HfN), molybdenum (Mo), and titanium silicide (TiSi).

7. A manufacturing method of a substrate structure, comprising:

forming a base material in a region above a substrate;

forming a catalytic material in the region; and

growing a linear structure made of a carbon element using the catalytic material as a nucleus,

wherein the catalytic material is formed by mixing a plurality of kinds of catalytic fine particles each having a different catalytic ability.

8. The manufacturing method of the substrate structure according to claim 7 ,

wherein the respective catalytic fine particles contain at least one kind of metal selected from the metal group consisting of iron (Fe), nickel (Ni), cobalt (Co), gold (Au), silver (Ag), and copper (Cu), or at least one kind of alloy selected from the alloy group consisting of alloys composed of two kinds or more of iron (Fe), nickel (Ni), cobalt (Co), gold (Au), silver (Ag), and copper (Cu).

9. The manufacturing method of the substrate structure according to claim 7 ,

wherein the respective catalytic fine particles are formed of each different material.

10. The manufacturing method of the substrate structure according to claim 9 ,

wherein the linear structures are grown under each different growth condition using the respective catalytic fine particles as the nuclei due to a difference in catalytic abilities of the respective catalytic fine particles, at the time of said growth of the linear structure.

11. The manufacturing method of the substrate structure according to claim 7 ,

wherein the respective catalytic fine particles are formed of the same material.

12. The manufacturing method of the substrate structure according to claim 7 ,

wherein the respective catalytic fine particles differ in sizes from each other.

13. The manufacturing method of the substrate structure according to claim 7 ,

wherein the respective catalytic fine particles have an average value of diameters controlled to fall within a range of 1 to 30 nm, and a standard deviation of a diameter distribution controlled to be within 1.5.

14. The manufacturing method of the substrate structure according to claim 7 ,

wherein the base material contains at least one kind selected from the group consisting of titanium (Ti), tantalum (Ta), titanium nitride (TiN), tantalum nitride (TaN), aluminum (Al), hafnium nitride (HfN), molybdenum (Mo), and titanium silicide (TiSi).

Assignments (4)
CHANGE OF ADDRESS Recorded Dec 23, 2016
From: FUJITSU SEMICONDUCTOR LIMITED
To: FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 041188/0401 →
CHANGE OF NAME Recorded Jul 9, 2010
From: FUJITSU MICROELECTRONICS LIMITED
To: FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 024651/0744 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 9, 2008
From: FUJITSU LIMITED
To: FUJITSU MICROELECTRONICS LIMITED
Reel/Frame 021976/0089 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 9, 2008
From: KONDO, DAIYU
To: FUJITSU LIMITED
Reel/Frame 020777/0231 →