IP Library › Granted Patent US 8,377,341
Granted Patent B2
US 8,377,341 · App. 12/100,824 · Granted Feb 19, 2013

Tellurium (Te) precursors for making phase change memory materials

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Quick Facts
Patent No.
US 8,377,341
App. No.
12/100,824
Granted
Feb 19, 2013
Kind
B2
Abstract

Tellurium (Te)-containing precursors, Te containing chalcogenide phase change materials are disclosed in the specification. A method of making Te containing chalcogenide phase change materials using ALD, CVD or cyclic CVD process is also disclosed in the specification in which at least one of the disclosed tellurium (Te)-containing precursors is introduced to the process.

Claims (4)

1. A Te containing composition comprising deuterated organotellurol having a general structure of:

R—Te-D

wherein R is selected from the group consisting of N-butyl, T-Butyl and an alkenyl group having 1 to 10 carbons in linear, branched, or cyclic form; an aromatic group having C 6 -C 12 ; a dialkylamino group; an organosilyl group; and an organogermyl, and D is deuterium.

2. The Te containing composition of claim 1 selected from the group consisting of N-Butyltellurol-D and T-Butyltellurol-D.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 20, 2017
From: AIR PRODUCTS AND CHEMICALS, INC.
To: VERSUM MATERIALS US, LLC
Reel/Frame 041772/0733 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 21, 2008
From: XIAO, MANCHAO; GAFFNEY, THOMAS RICHARD
To: AIR PRODUCTS AND CHEMICALS, INC.
Reel/Frame 020977/0372 →