IP Library Granted Patent US 7,969,638
Granted Patent B2
US 7,969,638 · App. 12/101,073 · Granted Jun 28, 2011

Device having thin black mask and method of fabricating the same

Assignee: QUALCOMM MEMS Technologies, Inc.
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Quick Facts
Patent No.
US 7,969,638
App. No.
12/101,073
Granted
Jun 28, 2011
Kind
B2
Abstract

A thin black mask is created using a single mask process. A dielectric layer is deposited over a substrate. An absorber layer is deposited over the dielectric layer and a reflector layer is deposited over the absorber layer. The absorber layer and the reflector layer are patterned using a single mask process.

Claims (17)

1. A device comprising:

a black mask comprising a first, second, and a third layer in succession;

the first layer with a first extinction coefficient to refractive index ratio;

the second layer with a second extinction coefficient to refractive index ratio;

the third layer with a third extinction coefficient to refractive index ratio;

wherein the first extinction coefficient to refractive index ratio is less than the second extinction coefficient to refractive index ratio and the second extinction coefficient to refractive index ratio is less than the third extinction coefficient to refractive index ratio, and wherein the first layer contacts the second layer, and the second layer contacts the third layer.

2. The device of claim 1 , wherein the black mask comprises a stack of interference films.

3. The electronic device of claim 1 , wherein the stacked layers comprise:

a dielectric layer deposited over a substrate,

an absorber layer deposited over the dielectric layer, and

a reflector layer deposited over the absorber layer.

4. The device of claim 3 , wherein the dielectric layer has an extinction coefficient in a range from 0 to 0.1 and a refractive index in a range of 1 to 3.

5. The device of claim 3 , wherein the absorber layer has an extinction coefficient in a range from 1 to 4 and a refractive index in a range of 1 to 5.

6. The device of claim 3 , wherein the reflector layer has an extinction coefficient in a range from 1 to 5 and a refractive index in a range of 0.1 to 5.

7. The device of claim 3 , wherein the dielectric layer comprises at least two layers of material.

8. The device of claim 3 , wherein the absorber layer comprises at least two layers of material.

9. The device of claim 3 , wherein the reflector layer comprises at least two layers of material.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 31, 2016
From: QUALCOMM MEMS TECHNOLOGIES, INC.
To: SNAPTRACK, INC.
Reel/Frame 039891/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 16, 2008
From: XU, GANG; WANG, CHUN-MING; ZHONG, FAN; LUO, QI
To: QUALCOMM MEMS TECHNOLOGIES, INC.
Reel/Frame 020993/0069 →
Continuity (1)
Related Publication 20090257105A1 · Oct 15, 2009