Method for fabricating a metal gate structure
View Patent ↗A method of fabricating a metal gate structure is provided. The method includes providing a semiconductor substrate with a planarized polysilicon material; patterned the planarized polysilicon material to form at least a first gate and a second gate, wherein the first gate is located on the active region and the second gate at least partially overlaps with the isolation region; forming an inter-layer dielectric material covering the gates; planarizing the inter-layer dielectric material until exposing the gates and forming an inter layer-dielectric layer; performing an etching process to remove the gates to form a first recess and a second recess within the inter-layer dielectric layer; forming a gate dielectric material on a surface of each of the recesses; forming at least a metal material within the recesses; and performing a planarization process.
1. A method of fabricating a metal gate structure, comprising:
providing a semiconductor substrate, the semiconductor substrate defining at least an isolation region and at least an active region;
forming a dielectric material on the semiconductor substrate;
forming a polysilicon material on the semiconductor substrate;
planarizing the polysilicon material using chemical mechanical polishing to form a planarized polysilicon material on the isolation region and the active region;
patterning the planarized polysilicon material and the dielectric material to form at least a first gate and a second gate on the semiconductor substrate, wherein the first gate is on the active region and the second gate is partially set across on the isolation region;
forming an inter-layer dielectric material covering the first gate and the second gate on the semiconductor substrate;
removing a portion of the inter-layer dielectric material until exposing the first gate and the second gate;
performing an etching process to remove the first gate and the second gate to form a first recess and a second recess corresponding respectively to the first gate and the second gate within the inter-layer dielectric layer;
forming at least a metal material within the first recess and the second recess.
2. The method of claim 1 , wherein the dielectric material formed before forming the polysilicon material is a high-K dielectric material.
3. The method of claim 1 , after removing the first and the second gate, comprises;
removing the dielectric material; and
forming at least a gate dielectric material within the first recess and the second recess.
4. The method of claim 3 , wherein the at least the gate dielectric material is a high-K dielectric material.
5. The method of claim 3 , wherein the at least the gate dielectric material comprises another dielectric material and a high-K dielectric material.
6. The method of claim 1 , wherein the etching process comprises a dry etching process or a wet etching process.
7. The method of claim 1 , wherein the at least a metal material formed within the first recess and the second recess is an N-type metal material, and the N-type metal material comprises titanium aluminum nitride (TiAlN), tantalum carbide (TaC), tantalum nitride (TaN), or an arbitrary combination of titanium aluminum nitride (TiAlN), tantalum carbide (TaC), and tantalum nitride (TaN).
8. The method of claim 1 , wherein the at least a metal material formed within the first recess and the second recess is an P-type metal material, and the P-type metal material comprises titanium nitride (TiN), tungsten (W), tungsten nitride (WN), molybdenum nitride (MoN), molybdenum aluminum nitride (MoAlN), or an arbitrary combination of titanium nitride (TiN), tungsten (W), tungsten nitride (WN), molybdenum nitride (MoN), and molybdenum aluminum nitride (MoAlN).
9. The method of claim 1 , wherein the metal material formed within the first recess is a P-type metal material which comprises titanium nitride (TiN), tungsten (W), tungsten nitride (WN), molybdenum nitride (MoN), molybdenum aluminum nitride (MoAlN), or an arbitrary combination of titanium nitride (TiN), tungsten (W), tungsten nitride (WN), molybdenum nitride (MoN), and molybdenum aluminum nitride (MoAlN); and the metal material formed within the second recess is an N-type metal material which comprises titanium aluminum nitride (TiAlN), tantalum carbide (TaC), tantalum nitride (TaN), or an arbitrary combination of titanium aluminum nitride (TiAlN), tantalum carbide (TaC), and tantalum nitride (TaN).
10. The method of claim 1 , wherein the metal material formed within second recess is a P-type metal material which comprises titanium nitride (TiN), tungsten (W), tungsten nitride (WN), molybdenum nitride (MoN), molybdenum aluminum nitride (MoAlN), or an arbitrary combination of titanium nitride (TiN), tungsten (W), tungsten nitride (WN), molybdenum nitride (MoN), and molybdenum aluminum nitride (MoAlN); and the metal material formed within the first recess is an N-type metal material which comprises titanium aluminum nitride (TiAlN), tantalum carbide (TaC), tantalum nitride (TaN), or an arbitrary combination of titanium aluminum nitride (TiAlN), tantalum carbide (TaC), and tantalum nitride (TaN).