Composite photoresist structure
View Patent ↗A composite photoresist structure includes a first organic layer disposed over a substrate to be etched, a sacrificial layer disposed on the first organic layer, and a second organic layer disposed on the sacrificial layer. The thickness of the first organic layer and the thickness of the second organic layer are both larger than the thickness of the sacrificial layer.
1. A composite photoresist structure, comprising:
a first organic layer disposed over a substrate to be etched;
a sacrificial layer disposed directly on the first organic layer; and
a second organic layer disposed directly on the sacrificial layer;
wherein a thickness of the first organic layer and a thickness of the second organic layer are both larger than a thickness of the sacrificial layer.
2. The composite photoresist structure of claim 1 wherein the thickness of the first organic layer is larger than the thickness of the second organic layer.
3. The composite photoresist structure of claim 1 wherein the substrate comprises silicon, metal, or dielectric materials.
4. The composite photoresist structure of claim 1 wherein the first organic layer is made of an organic material that is easy to be removed by means of plasma, thereby avoiding damage of the substrate to be etched during a pattern transferring process.
5. The composite photoresist structure of claim 4 wherein the first organic layer is made of low dielectric organic materials.
6. The composite photoresist structure of claim 4 wherein the first organic layer is made of SOG.
7. The composite photoresist structure of claim 4 wherein the plasma is selected from the group consisting of oxygen (O 2 ), nitrogen (N 2 ), hydrogen (H 2 ), argon (Ar), C x F y , C x H y F z , and helium (He) plasma.
8. The composite photoresist structure of claim 1 wherein the sacrificial layer is made of inorganic anti-reflection materials.
9. The composite photoresist structure of claim 1 wherein the sacrificial layer is made of silicon nitride, silicon oxide, or silicon oxynitride.
10. The composite photoresist structure of claim 1 wherein the second organic layer is made of an organic photoresist material capable of absorbing light with a wavelength of 248 nm and the less.
11. The composite photoresist structure of claim 1 wherein the second organic layer is suitable for an e-beam lithography process.
12. The composite photoresist structure of claim 1 wherein the substrate has a planar and smooth surface.
13. The composite photoresist structure of claim 1 wherein the composite photoresist structure is used for transferring a pattern onto the substrate to be etched.
14. The composite photoresist structure of claim 1 , wherein the composite photoresist structure will not be left on the substrate to be etched after a pattern transferring process.
15. A composite photoresist structure, comprising:
a first organic layer disposed over a substrate to be etched;
a sacrificial layer disposed directly on the first organic layer;
an anti-reflection layer disposed directly on the sacrificial layer; and
a second organic layer disposed directly on the anti-reflection layer;
wherein a thickness of the first organic layer and a thickness of the second organic layer are both larger than a thickness of the sacrificial layer.
16. The composite photoresist structure of claim 15 wherein the thickness of the first organic layer is larger than the thickness of the second organic layer.
17. The composite photoresist structure of claim 15 wherein the thickness of the sacrificial layer is larger than a thickness of the anti-reflection layer.
18. The photoresist structure of claim 15 wherein the anti-reflection layer is made of organic anti-reflection materials.
19. The photoresist structure of claim 15 wherein the anti-reflection layer is made of inorganic anti-reflection materials.
20. The photoresist structure of claim 19 wherein the anti-reflection layer is made of silicon nitride or silicon oxynitride.
21. The composite photoresist structure of claim 15 wherein the substrate comprises silicon, metal, or dielectric materials.
22. The composite photoresist structure of claim 15 wherein the first organic layer is made of an organic material that is easy to be removed by means of plasma, thereby avoiding damage of the substrate to be etched during a pattern transferring process.
23. The composite photoresist structure of claim 22 wherein the first organic layer is made of low dielectric organic materials.
24. The composite photoresist structure of claim 22 wherein the first organic layer is made of SOG.
25. The composite photoresist structure of claim 22 wherein the plasma is selected from the group consisting of oxygen (O 2 ), nitrogen (N 2 ), hydrogen (H 2 ), argon (Ar), C x F y , C x H y F z , and helium (He) plasma.
26. The composite photoresist structure of claim 15 wherein the sacrificial layer is made of inorganic anti-reflection materials.
27. The composite photoresist structure of claim 15 wherein the sacrificial layer is made of silicon nitride, silicon oxide, or silicon oxynitride.
28. The composite photoresist structure of claim 15 wherein the second organic layer is made of an organic photoresist material capable of absorbing light with a wavelength of 248 nm and the less.
29. The composite photoresist structure of claim 15 wherein the second organic layer is suitable for an e-beam lithography process.
30. The composite photoresist structure of claim 15 wherein the substrate has a planar and smooth surface.
31. The composite photoresist structure of claim 15 wherein the composite photoresist structure is used for transferring a pattern onto the substrate to be etched.
32. The composite photoresist structure of claim 15 , wherein the composite photoresist structure will not be left on the substrate to be etched after a pattern transferring process.