Semiconductor device and method of fabricating the same
View Patent ↗Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device can provide a trench MOS transistor having an up-drain structure. The semiconductor device can include a first conductive type well in a semiconductor substrate, a second conductive type well on the first conductive type well, trenches formed by removing portions of the second conductive type well and the first conductive type well; gates provided in the trenches with a gate dielectric being between each gate and the walls of the trench, a first conductive type source region and a second conductive type body region on the second conductive type well, the first conductive type source region surrounding a lateral surface of the gate, and a common drain between the gates, the common drain being connected to the first conductive type well.
1. A semiconductor device comprising:
a first conductive type well in a semiconductor substrate;
a second conductive type well on the first conductive type well;
a first trench passing through the second conductive type well and a portion of the first conductive type well;
a gate in the first trench with a gate dielectric between the gate and the walls of the trench;
a first conductive type source region on the second conductive type well and surrounding a lateral surface of the gate;
a second conductive type body region on the second conductive type well and surrounding a lateral surface of the first conductive type source region;
a common drain provided between the gate and an at least one adjacent gate, wherein the common drain is connected to the first conductive type well and the common drain surrounds a lateral surface of the second conductive type body region;
a high-concentration first conductive type buried layer below the first conductive type well; and
a high-concentration first conductive type plug between the common drain and the first conductive type buried layer.
2. The semiconductor device according to claim 1 , wherein the common drain is provided in a second trench, wherein the second trench passes through the second conductive type well and a portion of the first conductive type well.
3. The semiconductor device according to claim 2 , wherein the second trench has a width ranging from about 1.5 to about 3 times the width of the first trench.
4. The semiconductor device according to claim 2 , further comprising a first dielectric in the second trench between sidewalls of the second trench and the common drain.
5. The semiconductor device according to claim 2 , further comprising: a first dielectric, a drain polysilicon, and a second dielectric consecutively provided in the second trench between the sidewalls of the second trench and the common drain.
6. The semiconductor device according to claim 5 , wherein the gate dielectric and the first dielectric each comprises a thermal oxide layer.
7. The semiconductor device according to claim 6 , wherein the second dielectric comprises an oxide layer.
8. The semiconductor device according to claim 1 , wherein the common drain comprises a high-concentration first conductive type material.
9. The semiconductor device according to claim 1 , wherein the common drain is in contact with the first conductive type well.