Imaging element and imaging device
An imaging element comprises: an optical element substrate part in which the imaging element generates a signal charge by photo-electrically converting an incident light applied from one surface side of the optical element substrate part to read the signal charge from the other surface side of the optical element substrate part and picks up an image; and a CMOS circuit substrate part connected to the other surface side of the optical element substrate part so as to transfer the signal charge generated in the photoelectric conversion layer, wherein the optical element substrate part comprises: a photoelectric conversion layer to generate the signal charge by photo-electrically converting the incident light; a charge storage part that stores the signal charge; and a reading transistor that reads the signal charge stored in the charge storage part.
1. An imaging element comprising:
an optical element substrate part in which the imaging element generates a signal charge by photo-electrically converting an incident light applied from one surface side of the optical element substrate part to read the signal charge from the other surface side of the optical element substrate part and picks up an image, the optical element substrate part comprising:
a first insulating layer;
a photoelectric conversion layer to generate the signal charge by photo-electrically converting the incident light;
a charge storage part that stores the signal charge;
a reading transistor that reads the signal charge stored in the charge storage part; and
a plug electrode to which the signal charge read by the reading transistor is transferred, said plug electrode being formed in the first insulating layer;
a first micro bump that is connected to the plug electrode, said first micro bump being formed in the first insulating layer; and
a CMOS circuit substrate part connected to the other surface side of the optical element substrate part so as to transfer the signal charge generated in the photoelectric conversion layer, the CMOS circuit substrate part comprising:
a second insulating layer;
a second micro bump that contacts with the first micro bump of the optical element substrate part, said second micro bump being formed in the second insulating layer;
wherein the plug electrode of the optical element substrate part is connected to the second micro bump of the CMOS circuit substrate part,
the signal charge transferred to the plug electrode is further transferred to the second micro bump, and
the first micro bump is smaller in size than the second micro bump.
2. The imaging element according to claim 1 , further comprising:
an element side connecting terminal connected to the reading transistor and provided on the other surface side of the optical element substrate part for each pixel; and
a circuit side connecting terminal provided on a surface of the CMOS circuit substrate part for each pixel and connected to the element side connecting terminal.
3. The imaging element according to claim 1 , wherein the reading transistor comprises a high concentration p layer directed toward the CMOS circuit substrate part.
4. The imaging element according to claim 1 , wherein the CMOS circuit substrate part comprises:
a wiring layer;
a stack type storage capacity part formed by using at least a part of the wiring layer; and
a voltage fixing electrode that stabilizes the capacity of the storage capacity part.
5. The imaging element according to claim 1 , wherein the CMOS circuit substrate part comprises:
a charge detecting area that detects the signal charge; and
a transfer transistor that transfers the signal charge to the charge detecting area are formed.
6. The imaging device comprising:
an optical element substrate part in which the imaging element generates a signal charge by photo-electrically converting an incident light applied from one surface side of the optical element substrate part to read the signal charge from the other surface side of the optical element substrate part and picks up an image, the optical element substrate part comprising:
a first insulating layer;
a photoelectric conversion layer to generate the signal charge by photo-electrically converting the incident light;
a charge storage part that stores the signal charge;
a reading transistor that reads the signal charge stored in the charge storage part; and
a plug electrode to which the signal charge read by the reading transistor is transferred, said plug electrode being formed in the first insulating layer;
a first micro bump that is connected to the plug electrode, said first micro bump being formed in the first insulating layer; and
a CMOS circuit substrate part connected to the other surface side of the optical element substrate part so as to transfer the signal charge generated in the photoelectric conversion layer, the CMOS circuit substrate part comprising:
a second insulating layer;
a second micro bump that contacts with the first micro bump of the optical element substrate part, said second micro bump being formed in the second insulating layer;
wherein the plug electrode of the optical element substrate part is connected to the second micro bump of the CMOS circuit substrate part,
the signal charge transferred to the plug electrode is further transferred to the second micro bump, and
the first micro bump is smaller in size than the second micro bump; and
a voltage applying unit that applies to the reading transistor a reading pulse of a voltage higher than a driving voltage applied to the CMOS circuit substrate part.