Standard component for length measurement, method for producing the same, and electron beam metrology system using the same
View Patent ↗A standard component for length measurement includes a first diffraction grating and a second diffraction grating. Each of components of the second diffraction grating is disposed between components of the first diffraction grating.
1. A standard component for length measurement, comprising:
a first diffraction grating; and
a second diffraction grating;
wherein each of components of the second diffraction grating is disposed between components of the first diffraction grating.
2. A standard component for length measurement according to claim 1 , wherein the first diffraction grating comprises first components extending in a first direction and the second diffraction grating comprises second components extending in first direction.
3. The standard component for length measurement according to claim 1 , wherein the first diffraction grating comprises first components having a first length and the second diffraction grating comprises second components having a second length shorter than the first length of the first components.
4. The standard component for length measurement according to claim 1 , wherein in a second direction perpendicular to the first direction, first components of the first diffraction grating having a first pitch which is longer than a second pitch of second components of the second diffraction grating.
5. The standard component for length measurement according to claim 1 , wherein the second diffraction grating is disposed within the first diffraction grating.
6. The standard component for length measurement according to claim 4 , wherein the second pitch is not greater than 100 nm.
7. The standard component for length measurement according to claim 1 , wherein the first diffraction grating and the second diffraction grating consist of one unit, and many units are arranged in a matrix.
8. A standard component for length measurement, comprising:
a first region where a first diffraction grating having a first pitch is formed; and
a second region where a second diffraction grating of a second pitch which is shorter than the first pitch of the first diffraction grating is formed.
9. The standard component for length measurement according to claim 8 , wherein the second pitch is not greater than 100 nm.
10. An electron-beam microscopy system comprising:
electron beam length measuring means for measuring processing dimensions of a sample by irradiating and scanning an electron beam;
a standard component for length measurement comprising a first diffraction grating having first components and a second diffraction grating having second components, the second components being disposed between first components; and
calibrating means for calibrating a dimension based on a secondary electron signal waveform obtained by scanning the electron beam on the standard component for length measurement.
11. The electron-beam microscopy system according to claim 10 , wherein the first diffraction grating comprises first components extending in a first direction and the second diffraction grating comprises second components extending the first direction.
12. The electron-beam microscopy system according to claim 10 , wherein the first components of the first diffraction grating have a first length and the second components of the second diffraction grating have a second length which is shorter than the first length.
13. The electron-beam microscopy system according to claim 10 , wherein in a second direction perpendicular to the first direction, the first components of the first diffraction grating have a first pitch which is longer than a second pitch of second components of the second diffraction grating.
14. The electron-beam microscopy system according to claim 10 , wherein the second components of the second diffraction grating are disposed within the first components of the first diffracting grating.
15. The electron-beam microcopy system according to claim 13 , wherein the second pitch is not greater than 100 nm.
16. The electron-beam microscopy system according to claim 10 , wherein the first diffraction grating and the second diffraction grating consist of one unit, and many units are arranged in a matrix.