Method of forming shallow trench isolation structures for integrated circuits
View Patent ↗A method of forming shallow trench isolation (STI) structures using a multi-step etch process is disclosed. The first etch step is performed by selectively etching the substrate at a substantially higher etching rate than the mask layer to form preliminary openings having steep taper angles. The second etch step is performed by non-selectively etching the substrate to deepen the preliminary openings to form STI gaps with substantially flat bottoms.
1. A method of forming an integrated circuit comprising:
providing a substrate prepared with a patterned mask with an opening;
etching the substrate to form an upper portion of a trench structure in the substrate exposed by the opening, the upper portion of the trench structure is from a top surface of the substrate, the upper portion comprising sidewalls with a first angle Q 1 with respect to the top surface of the substrate, wherein the etching comprises an anisotropic etch selective to the patterned mask;
further etching the substrate to form a lower portion of the trench below the upper portion, wherein the lower portion comprises a second angle Q 2 with respect to the top surface of the substrate, wherein the formed trench has the angle Q 1 in the upper portion and the angle Q 2 in the lower portion, wherein Q 2 is less than Q 1 , wherein the further etching comprises an anisotropic etch non-selective to the patterned mask; and
filling the trench with dielectric material.
2. The method of claim 1 wherein the patterned mask comprises a soft mask and a hard mask.
3. The method of claim 1 wherein filling the trench with dielectric material forms a shallow trench isolation (STI).
4. The method of claim 1 wherein having Q 2 less than Q 1 enables the trench to have a lower effective Q (Q eff ) to improve filling.
5. The method of claim 1 wherein:
a depth of trench is equal to D T ;
a depth of the upper portion is equal to D 1 ; and
a depth of the lower portion is equal to D 2 , wherein D 1 is greater than D 2 .
6. The method of claim 1 wherein the upper and lower portions are contiguous portions.
7. The method of claim 2 wherein the soft mask remains during etching of the substrate.
8. The method of claim 2 wherein having Q 2 less than Q 1 enables the trench to have a lower effective Q (Q eff ) to improve filling.
9. The method of claim 3 wherein:
the mask comprises a soft mask and a hard mask.
10. The method of claim 3 wherein filling the trench comprises filling with a high aspect ratio process dielectric material.
11. The method of claim 4 wherein Q eff is equal to less than about 88°.
12. The method of claim 5 wherein having Q 2 less than Q 1 enables the trench to have a lower effective Q (Q eff ) to improve filling.
13. The method of claim 10 wherein:
etching the substrate comprises an anisotropic etch selective to the patterned mask at an etch selectivity of 10:1 with respect to the mask;
further etching the substrate comprises an anisotropic etch non-selective to the patterned mask at an etch selectivity of 1:1 to 3:1 with respect to the mask; and
the mask comprises a soft mask and a hard mask.
14. The method of claim 11 wherein Q eff is equal to about 82-88°.
15. The method of claim 12 wherein D 1 is greater than 50% to about 80% of D T .
16. A method of forming an isolation trench comprising:
providing a substrate prepared with a patterned mask with an opening;
etching the substrate to form an upper portion of a trench structure in the substrate exposed by the opening, the upper portion is from a top surface of the substrate, the etch to form the upper portion employs a polymerizing chemistry to passivate sidewalls of the upper portion to form passivated upper sidewalls in the upper portion having a first angle Q 1 with respect to the top surface of the substrate, wherein etching the substrate comprises an anisotropic etch selective to the patterned mask;
further etching the substrate to form a lower portion of the trench below the upper portion, wherein the lower portion comprises lower sidewalls having a second angle Q 2 with respect to the top surface of the substrate in which Q 2 is less than Q 1 , wherein the passivated upper sidewalls maintain Q 1 when forming the lower portion, wherein further etching the substrate comprises an anisotropic etch non-selective to the patterned mask; and
filling the trench with a high aspect ratio process dielectric material.
17. The method of claim 16 wherein the upper and lower portions are contiguous portions.
18. The method of claim 16 wherein the patterned mask comprises a soft mask and a hard mask.
19. The method of claim 16 wherein:
etching the substrate comprises an anisotropic etch selective to the patterned mask at an etch selectivity of 10:1 with respect to the mask;
further etching the substrate comprises an anisotropic etch non-selective to the patterned mask at an etch selectivity of 1:1 to 3:1 with respect to the mask; and
the mask comprises a soft mask and a hard mask.
20. The method of claim 16 wherein having Q 2 less than Q 1 enables the trench to have a lower effective Q (Q eff ) to improve filling.
21. The method of claim 18 wherein the soft mask remains during etching of the substrate.
22. The method of claim 20 wherein Q eff is equal to less than about 88°.
23. The method of claim 2 wherein Q eff is equal to about 82-88°.