Single-poly non-volatile memory cell

1. A non-volatile memory cell, comprising:

a substrate including diffusion regions for a read-out transistor;

a capacitor formed in a polysilicon layer adjacent the substrate, the capacitor including a floating gate for the read-out transistor and a control gate, the floating gate and the control gate each having finger extensions, the finger extensions from the floating gate interdigitating with the finger extensions from the control gate; and

a programming line coupled to the control gate, wherein the substrate is p− doped such that the read-out transistor is an NMOS transistor, the substrate including an n-well adjacent the interdigitation of the finger extensions, the n-well having an active region with a first portion doped n+ and a second portion doped p+, the floating gate including an additional extension that overlays both portions in the active region so as to create an n+ doped channel and a p+ doped channel in the active region.

2. The non-volatile memory cell of claim 1 , wherein a first semiconductor process metal layer is adjacent the polysilicon layer, the non-volatile memory cell further comprising a plate formed in the first semiconductor process metal layer, the plate overlapping the interdigitation of the finger extensions and coupled to the programming line.

3. The non-volatile memory cell of claim 1 , further comprising an erase line coupled to both the first portion and the second portion of the active region outside the active region channels.

4. The non-volatile memory cell of claim 3 , further comprising:

an access transistor;

a word line; and

a bit line, the access transistor being controlled by the word line such that the read-out transistor is coupled to the bit line if the access transistor is switched on by the word line.

5. The non-volatile memory cell of claim 1 , wherein the floating gate and the control gate each have at least four interdigitated finger extensions.

6. A method of programming a non-volatile memory cell, wherein the non-volatile memory cell includes a fringe capacitor formed in a single polysilicon layer, the fringe capacitor forming a floating gate and a control gate that capacitively couple through interdigitated fingers, the control gate coupling to a programming line and the floating gate coupling to an erase line through a tunneling device, the method comprising:

charging the programming line to a programming voltage; and

while the programming line is charged, lowering a potential of the erase line such that electrons tunnel from the erase line into the floating gate so as to program the non-volatile memory cell, wherein the floating gate forms a gate for a read-out transistor, the method further comprising: lowering a potential of a terminal for the read-out transistor while the programming line is charged such that electrons tunnel through the gate of the read-out transistor into the floating gate.