Structures and methods for stack type semiconductor packaging
View Patent ↗Methods and structures for stack type semiconductor packaging are disclosed. In one embodiment, a semiconductor device includes a semiconductor chip mounted onto a substrate, a first resin molding portion formed on the substrate for sealing the semiconductor chip, and a through metal mounted on the substrate so as to pierce the first resin molding portion around the semiconductor chip. The semiconductor device further comprises an upper metal electrically coupled with the through metal and mounted on the first resin molding portion to extend from the through metal toward the semiconductor chip along an upper surface of the first resin molding portion, where the through metal and the upper metal are formed into an integral structure.
1. A semiconductor device, comprising:
a semiconductor chip mounted onto a substrate;
a first resin molding portion formed on the substrate for sealing the semiconductor chip, the first resin molding portion comprising a plurality of notches and a corresponding plurality of through holes, the plurality of notches extending horizontally and substantially parallel to the surface of the substrate;
a plurality of through metals mounted on respective through holes of the plurality of through holes, wherein a plurality of upper surfaces of the plurality of through metals is coplanar with an upper surface of the first resin molding portion; and
a first plurality of upper metals electrically coupled with respective through metals of the plurality of through metals, the first plurality of upper metals comprising a first upper metal extending over a first portion of the semiconductor chip and a second upper metal extending over a second portion of the semiconductor chip, the first and second upper metals separated by a stepped portion of the first resin molding portion,
wherein a plurality of upper surfaces of the first plurality of upper metals is coplanar with the plurality of upper surfaces of the plurality of through metals.
2. The semiconductor device according to claim 1 , wherein each of the through metal and the upper metal is formed of a material which comprises copper.
3. The semiconductor device according to claim 1 , wherein the semiconductor chip is packaged onto the substrate face down.
4. The semiconductor device according to claim 1 , further comprising a plurality of land electrodes formed below the substrate.
5. The semiconductor device according to claim 4 , further comprising a plurality of solder balls with each solder ball electrically coupled to the through metal via a respective one of the land electrodes.
6. The semiconductor device according to claim 1 , further comprising a solder resist applied on the first resin molding portion.
7. The semiconductor device according to claim 6 , wherein the solder resist comprises at least one opening through which the upper metal is exposed.
8. The semiconductor device according to claim 1 , wherein the upper metal forms a contiguous surface with the upper surface of the first resin molding portion.
9. A method for packaging a semiconductor device, comprising:
mounting a semiconductor chip onto a substrate;
forming a first resin molding portion on the substrate for sealing the semiconductor chip, the first resin molding portion comprising a plurality of notches and a corresponding plurality of through holes formed simultaneously with the plurality of notches, the plurality of notches extending horizontally and substantially parallel to the surface of the substrate;
forming on respective through holes of the plurality of through holes a plurality of through metals which pierces the first resin molding portion around the semiconductor chip, wherein a plurality of upper surfaces of the plurality of through metals is coplanar with an upper surface of the first resin molding portion; and
forming on the first resin molding portion a first plurality of upper metals which is electrically coupled with corresponding through metals of the plurality of through metals, wherein the forming of the plurality of through metals is performed simultaneously with the forming of the first plurality of upper metals so as to form an integral structure of each through metal and each corresponding upper metal, wherein the first plurality of upper metals comprises a first upper metal extending over a first portion of the semiconductor chip and a second upper metal extending over a second portion of the semiconductor chip, the first and second upper metals separated by a stepped portion of the first resin molding portion,
wherein forming the first plurality of upper metals comprises forming the first plurality of upper metals such that a plurality of upper surfaces of the first plurality of upper metals is coplanar with the plurality of upper surfaces of the plurality of through metals.
10. The method according to claim 9 , wherein the forming of the first resin molding portion comprises forming a through hole which pierces the first resin molding portion around the semiconductor chip and forming a respective notch of the plurality of notches which extends from the through hole toward the semiconductor chip on an upper surface of the first resin molding portion.
11. The method according to claim 10 , wherein the forming of the through metal comprises filling the through hole with a conductive material.
12. The method according to claim 10 , wherein the forming of the upper metal comprises filling the notch with a conductive material.
13. The method according to claim 9 , further comprising forming a solder resist above the upper metal, the through metal and the first resin molding portion, wherein the solder resist comprises at least one opening for connecting the upper metal to solder balls of another semiconductor device stacked above.
14. The method according to claim 9 , further comprising forming a plurality of land electrodes formed below the substrate.
15. The method according to claim 14 , further comprising forming a plurality of solder balls affixed to the land electrodes.
16. A method for packaging a semiconductor device, comprising:
mounting a semiconductor chip onto a substrate;
forming a first resin molding portion on the semiconductor chip;
forming a metal frame made of a plurality of through metals connected to the substrate and a first plurality of corresponding upper metals formed on the first resin molding portion, wherein a plurality of upper surfaces of the plurality of through metals is coplanar with an upper surface of the first resin molding portion, and wherein the first plurality of corresponding upper metals comprises a first upper metal extending over a first portion of the semiconductor chip and a second upper metal extending over a second portion of the semiconductor chip, the first and second upper metals separated by a stepped portion of the first resin molding portion; and
forming a second resin molding portion on the substrate surrounding the first molding portion, wherein the first resin molding portion and the second resin molding portion is formed such that an upper surface of the metal frame is exposed, and wherein a plurality of upper surfaces of the first plurality of upper metals is coplanar with plurality of upper surfaces of the plurality of through metals.
17. The method according to claim 16 , further comprising forming a solder resist above the upper metal, the through metal, the first resin molding portion, and the second resin molding portion, wherein the solder resist comprises at least one opening for connecting the upper metal to solder balls of another semiconductor device stacked above.
18. The method according to claim 16 , further comprising forming a plurality of land electrodes formed below the substrate.
19. The method according to claim 16 , further comprising forming a plurality of solder balls affixed to the land electrodes.
20. The method according to claim 19 , wherein the forming of the plurality of the solder balls is confined within the second resin molding portion.