Optimization of metallurgical properties of a solder joint
View Patent ↗Semiconductor packaging techniques are provided which optimize metallurgical properties of a joint using dissimilar solders. A solder composition for Controlled Collapse Chip Connection processing includes a combination of a tin based lead free solder component designed for a chip and a second solder component designed for a laminate. The total concentration of module Ag after reflow is less than 1.9% by weight. A method of manufacturing a solder component is also provided.
1. A solder composition for Controlled Collapse Chip Connection processing comprising a combination of a tin based lead free solder component designed for a chip and a second solder component designed for a laminate with a total concentration of module Ag after reflow being less than 1.9% by weight,
wherein a volume ratio of the tin based lead free solder component to the second solder component is 2:1;
the tin based lead free solder component is SnAg(x),
where (x) represents a percentage of Ag;
the second solder component is one of SAC and SnCu; and
where (x) is 1.8 wt % or less when the second solder component is SnCu, and (x) is about 0.5 wt % or less when the second solder component is SAC.
2. The solder composition of claim 1 , wherein a component concentration of Ag, (x), is at least 0.5% by weight.
3. The solder composition of claim 1 , wherein (x) is less than 1.8 wt % when the second solder component is SnCu.
4. The solder composition of claim 3 , wherein a module concentration of Ag is greater than 0.33% by weight and the second solder component is SnCu.
5. The solder composition of claim 1 , wherein (x) is zero and the second solder component is SAC.
6. The solder composition of claim 1 , wherein the SAC comprises 3 wt % Ag and (y) is less than 3 wt %.
7. The solder composition of claim 6 , wherein a maximum Cu content (y) after solidification is 1.2 wt %.
8. The solder composition of claim 1 , wherein the second solder component is SnCu to lower the total concentration of module Ag and creep resistance of the solder composition.
9. The solder composition of claim 1 , wherein the second solder component is SAC to lower the total concentration of module Ag and creep resistance of the solder composition.
10. A solder composition, comprising:
a tin based lead free solder component is SnAg(x), where (x) represents a percentage of Ag; and
a second solder component is one of SAC and SnCu, wherein:
(x) is 1.8 wt % or less when the second solder component is SnCu, and (x) is about 0.5 wt % or less when the second component is SAC;
a module concentration comprising a join of the tin based lead free solder component and the second solder component is less than 1.9% Ag by weight; and
a volume ratio of the tin based lead free solder component to the second solder component is 2:1.
11. The solder composition of claim 10 , wherein (x) is at least 0.5 wt %.
12. The solder composition of claim 10 , wherein (x) is less than 1.8 wt % when the second solder component is SnCu.
13. The solder composition of claim 10 , wherein a module concentration of Ag is greater than 0.33% by weight.
14. The solder composition of claim 10 , wherein (x) is zero and the second solder component is of SAC.
15. A method of manufacturing a solder component, comprising:
providing a tin based lead free solder component on a chip;
providing a second solder component on a laminate;
reflowing the tin based lead free solder component and the second solder component at a predetermined temperature to form an interconnect structure between the chip and the laminate, wherein the reflowing joins the tin based lead free solder component and the second solder component with an Ag module concentration of less than 1.9% by weight after the reflowing,
wherein a volume ratio of the tin based lead free solder component to the second solder component is 2:1;
the tin based lead free solder component is SnAg(x),
where (x) represents a percentage of Ag;
the second solder component is one of SAC and SnCu; and
where (x) is 1.8 wt % or less when the second solder component is SnCu, and (x) is about 0.5 wt % or less when the second component is SAC.