Electronic component comprising a titanium carbonitride (TiCN) barrier layer and process of making the same
An electronic component comprising several superimposed layers of materials including a TiCN barrier layer. A process for depositing a TiCN layer in order to obtain an electronic component, where a titanium precursor is chosen from among tetrakis(dimethylamido)titanium and/or tetrakis(diethylamido)titanium and is decomposed on a substrate by plasma-enhanced atomic layer deposition (PEALD) where the plasma is obtained with a hydrogen-rich gas which can contain nitrogen with at most 5 atomic % nitrogen and at least 95 atomic % hydrogen.
1. An electronic component comprising a layered stack having a barrier layer of TiCN, wherein the TiCN comprises, in atomic percentages:
between about 40% and about 60% of titanium,
between about 10% and about 15% of carbon, and
between about 30% and about 50% of nitrogen, and wherein the TiCN of the barrier layer is more than 90% crystallized.
2. The electronic component according to claim 1 , wherein the TiCN of the barrier layer is completely crystallized.
3. The electronic component according to claim 1 , wherein the TiCN contains at most 0.5 atomic % oxygen.
4. The electronic component according to claim 3 , wherein the TiCN contains at most 0.1 atomic % oxygen.
5. The electronic component according to claim 1 , wherein the TiCN comprises, in atomic percentages: between about 45% and about 55% titanium; about 12% carbon, and between about 35% and 45% nitrogen.
6. The electronic component according to claim 1 , where the electronic component is a transistor.
7. The electronic component according to claim 6 , wherein the transistor is a CMOS transistor.
8. The electronic component according to claim 1 , where the electronic component is a capacitor.
9. The electronic component according to claim 8 , wherein the capacitor is a Metal-Insulator-Metal capacitor or a trench capacitor.
10. The electronic component according to claim 1 , wherein the TiCN of the barrier layer is about 200 Å thick and has a resistivity of about 200 μΩ·cm.
11. An electronic component comprising a TiCN layer formed by:
decomposing a titanium precursor chosen from the group consisting of tetrakis(dimethylamido)titanium and tetrakis(diethylamido)titanium on a substrate; and
contacting the substrate with plasma of a hydrogen-rich gas having at most 5 atomic % nitrogen and at least 95 atomic % hydrogen, wherein the TiCN comprises between about 10% and about 15% of carbon.
12. The electronic component of claim 11 wherein the TiCN layer comprises, in atomic percentages:
Ti: between about 40% and about 60%;
and
N: between about 30% and about 50%.
13. The electronic component according to claim 12 , wherein the TiCN barrier layer comprises, in atomic percentages: between about 45% and about 55% titanium; about 12% carbon, and between about 35% and 45% nitrogen.
14. The electronic component according to claim 11 , wherein the TiCN barrier layer is about 200 Å thick and has a resistivity of about 200 μΩ·cm.
15. A transistor comprising:
a transistor gate including
a conductive layer; and
a TiCN barrier layer, wherein the TiCN is more than 90% crystallized, wherein the TiCN comprises, in atomic percentages: between about 40% and about 60% of titanium, between about 10% and about 15% of carbon, and between about 30% and about 50% of nitrogen, and wherein the TiCN contains at most 0.5 atomic % oxygen.
16. The transistor according to claim 15 , wherein the TiCN is completely crystallized.
17. The transistor according to claim 15 , wherein the TiCN barrier layer comprises, in atomic percentages: between about 45% and about 55% titanium; about 12% carbon, and between about 35% and 45% nitrogen.