High temperature, stable SiC device interconnects and packages having low thermal resistance
View Patent ↗A method of forming packages containing SiC or other semiconductor devices bonded to other components or conductive surfaces utilizing transient liquid phase (TLP) bonding to create high temperature melting point bonds using in situ formed ternary or quaternary mixtures of conductive metals and the devices created using TLP bonds of ternary or quaternary materials. The compositions meet the conflicting requirements of an interconnect or joint that can be exposed to high temperature, and is thermally and electrically conductive, void and creep resistant, corrosion resistant, and reliable upon temperature and power cycling.
1. A package comprising an electronic component mounted on a conductive coated substrate, the electronic component and the conductive coated substrate bonded by an electrically conductive mixture, the package operable for extended periods of time at temperatures in excess of about 300° C. and under high voltage loads or current flows, wherein:
the electronic component is a silicon carbide (SiC) device;
the conductive coated substrate is a copper coated aluminum nitride (AlN) substrate; and
the electrically conductive mixture comprises at least a ternary mixture or a quaternary mixture having a melting point between a higher melting component of the electrically conductive mixture and a lower melting component of the electrically conductive mixture.
2. The package of claim 1 , wherein the higher melting component of the electrically conductive mixture comprises gold or silver or a combination thereof and the lower melting component of the electrically conductive mixture comprises tin or indium or a combination thereof.
3. The package of claim 1 , wherein the ternary mixture is a silver-tin-gold alloy, a silver-indium-gold alloy, a silver-indium-tin alloy, or a gold-indium-tin alloy, and the quaternary mixture is a gold-indium-tin-silver alloy.
4. An electrically conductive assembly comprising:
a first electronic component including a first surface and a first electrically conductive material disposed on the first surface;
a second electronic component including a second surface, wherein a second electrically conductive material is disposed on the second surface and a third electrically conductive material is disposed on the second electrically conductive material; and
an electrically conductive interconnect between the first electronic component and the second electronic component, wherein the electrically conductive interconnect has a composition that is a mixture of at least the first electrically conductive material, the third electrically conductive material, and a bonding material positioned between the first surface and the second surface;
wherein the electrically conductive interconnect has a higher melting point than at least one of the first electrically conductive material, the third electrically conductive material, and the bonding material.
5. The electrically conductive assembly of claim 4 , wherein the first electronic component includes silicon carbide and the second electronic component includes an aluminum nitride substrate.
6. The electrically conductive assembly of claim 4 , wherein the composition is a ternary or quaternary composition.
7. The electrically conductive assembly of claim 4 , wherein the composition is a silver-tin-gold alloy, a silver-indium-gold alloy, a silver-indium-tin alloy, a gold-indium-tin alloy, or a gold-indium-tin-silver alloy.
8. The electrically conductive assembly of claim 4 , wherein the first electrically conductive material and the third electrically conductive material include at least one of gold or silver.
9. The electrically conductive assembly of claim 8 , wherein the second electrically conductive material further includes copper.
10. The electrically conductive assembly of claim 4 , wherein the bonding material is a transient liquid phase bonding material comprising tin and one of gold or indium.
11. An electrically conductive interconnect comprising:
a first electrically conductive material disposed on a first surface of a first component;
a second electrically conductive material disposed on a second surface of a second component;
a third electrically conductive material disposed on the second electrically conductive material; and
a bonding material configured to bond the first electrically conductive material to the third electrically conductive material to form an interconnect between the first component and the second component, wherein the interconnect comprises a composition that is a combination of the first electrically conductive material, the third electrically conductive material, and the bonding material; and
wherein the interconnect has a higher melting point than at least one of the first electrically conductive material, the third electrically conductive material, and the bonding material.
12. The electrically conductive interconnect of claim 11 , wherein the first component includes silicon carbide and the second component includes an aluminum nitride substrate.
13. The electrically conductive interconnect of claim 11 , wherein the composition includes at least three metals.
14. The electrically conductive interconnect of claim 11 , wherein the composition is a silver-tin-gold alloy, a silver-indium-gold alloy, a silver-indium-tin alloy, a gold-indium-tin alloy, or a gold-indium-tin-silver alloy.
15. The electrically conductive interconnect of claim 11 , wherein at least one of the first electrically conductive material and the third electrically conductive material comprise at least one of gold or silver.
16. The electrically conductive interconnect of claim 15 , wherein the second electrically conductive material further includes copper.
17. The electrically conductive interconnect of claim 11 , wherein the bonding material is a transient liquid phase bonding material.
18. The electrically conductive interconnect of claim 11 , wherein the bonding material includes tin and one of gold or indium.