Systems and methods for a thin film capacitor having a composite high-k thin film stack
Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrate material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor.
1. A method for fabricating a thin film capacitor, comprising:
depositing an electrode layer of conductive material on top of a substrate material;
depositing a first layer of a first ferroelectric material on top of the electrode layer utilizing a deposition process that forms a randomly-oriented grain structure;
depositing a second layer of a second ferroelectric material on top of the first layer using a high temperature sputter process in a manner that forms a columnar-oriented grain structure, wherein one of the first or second ferroelectric materials is a doped barium strontium titanate material and the other of the first or second ferroelectric materials is an undoped barium strontium titanate material; and
depositing a metal interconnect layer to provide electric connections for the capacitor.
2. The method of claim 1 , further comprising depositing one or more sets of additional alternating first and second layers of the first and second ferroelectric materials, wherein the additional first layers are deposited using a metal organic deposition or chemical solution deposition process and wherein the additional second layers are deposited using a high temperature sputter process before depositing the metal interconnect layer.
3. The method of claim 1 , further comprising patterning the first and second layers to form a mesa structure following depositing the first and second layers.
4. The method of claim 3 , further comprising:
depositing a planarizing and insulating layer following the patterning of the first and second layers; and
etching the planarizing and insulating layer to form vias.
5. The method of claim 4 , wherein the metal interconnect layers are deposited in the formed vias to provide electric connections to layers of the capacitor.
6. The method of claim 5 , further comprising depositing an insulating layer onto the substrate material before depositing the first layer of the first ferroelectric material.
7. The method of claim 1 , wherein the first layer of the first ferroelectric material is deposited by a spin-on process.
8. The method of claim 1 , wherein the first layer of the first ferroelectric material is deposited by a misted deposition process.
9. The method of claim 1 , wherein the first layer of the first ferroelectric material comprises the undoped Barium Strontium Titanate material.
10. The method of claim 1 , wherein the first layer of the first ferroelectric material is deposited such that the first layer of the first ferroelectric material planarizes the first electrode layer.
11. The method of claim 1 , wherein the first layer of the first ferroelectric material is deposited by a metal organic deposition process.
12. The method of claim 11 , wherein the first layer of the first ferroelectric material is deposited by a chemical solution deposition process.
13. The method of claim 1 , wherein the first layer of the first ferroelectric material is deposited about 0.06 μm in thickness.
14. The method of claim 1 , wherein the second layer of the second ferroelectric material is deposited about 0.23 μm in thickness.
15. A method for fabricating a thin film capacitor, comprising:
depositing an electrode layer of conductive material on top of a substrate;
depositing a first layer of ferroelectric material on top of the electrode layer in a manner that forms a randomly-oriented grain structure;
depositing a second layer of ferroelectric material on top of the first layer of ferroelectric material using a high temperature sputter process in a manner that forms a columnar-oriented grain structure; and
depositing a metal interconnect layer to provide electric connections to the capacitor, wherein the second layer of ferroelectric material is deposited such that the second layer is about six times as thick as the first layer of ferroelectric material.
16. The method of claim 15 , comprising depositing an insulating layer onto the substrate material before depositing the first layer of ferroelectric material.
17. The method of claim 16 , wherein the first layer of ferroelectric material and the second layer of ferroelectric material are different materials.
18. The method of claim 16 , wherein one of the first or second layers of ferroelectric material is a doped barium strontium titanate material and the other of the first or second layers of ferroelectric material is an undoped barium strontium titanate material.
19. The method of claim 15 , wherein the first layer of ferroelectric material is deposited by a spin-on process.
20. The method of claim 15 , wherein the first layer of ferroelectric material is deposited by a misted deposition process.
21. The method of claim 15 , comprising:
depositing a planarizing and insulating layer following patterning of the first and second layers; and
etching the planarizing and insulating layer to form vias.
22. The method of claim 21 , wherein the metal interconnect layer is deposited in the formed vias to provide electric connections to the capacitor.
23. A method for fabricating a thin film capacitor, comprising:
depositing a seed layer of ferroelectric material on top of an electrode layer utilizing a deposition process that forms a randomly-oriented grain structure;
depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process in a manner that forms a columnar-oriented grain structure; and
depositing a metal interconnect layer to provide electric connections for the capacitor.
24. The method of claim 23 , comprising depositing the electrode layer of conductive material on top of a substrate material.
25. The method of claim 24 , comprising depositing an insulating layer onto the substrate material before depositing the seed layer of ferroelectric material.
26. The method of claim 23 , wherein the seed layer of ferroelectric material and the second layer of ferroelectric material are different materials.
27. The method of claim 23 , wherein one of the seed layer of ferroelectric material or the second layer of ferroelectric material is a doped barium strontium titanate material and the other of the seed layer of ferroelectric material or the second layer of ferroelectric material is an undoped barium strontium titanate material.
28. The method of claim 23 , wherein the seed layer of ferroelectric material is deposited by a spin-on process.
29. The method of claim 23 , wherein the seed layer of ferroelectric material is deposited by a misted deposition process.
30. The method of claim 23 , comprising:
depositing a planarizing and insulating layer following the patterning of the seed and second layers; and
etching the planarizing and insulating layer to form vias.
31. The method of claim 30 , wherein the metal interconnect layer is deposited in the formed vias to provide electric connections to the capacitor.