Photo sensor and a method for manufacturing thereof

1. A method of manufacturing photo sensor, comprising:

providing a substrate having a switching element region and an electronic element region;

forming a gate on the switching element region of the substrate;

forming a gate dielectric layer, a semiconductor layer, and an electrical property enhancement layer in sequence to cover the gate and the substrate;

patterning the electrical property enhancement layer and the semiconductor layer to form a channel region on the gate dielectric layer above the gate;

forming a first conductive layer, a plurality of element function layers and a second conductive layer in sequence to cover the gate dielectric layer and the channel region;

patterning the second conductive layer and the element function layers wherein the element function layers patterned form a diode stack on the first conductive layer of the electronic element region, and the second conductive layer patterned forms a photoelectrode on the diode stack;

patterning the first conductive layer to form a source/drain above the opposite sides of the channel region and expose a part of the electrical property enhancement layer;

forming a insulating layer to cover the source/drain, the diode stack and the photoelectrode wherein the material of the insulating layer is a photoresist;

patterning the insulating layer to form an opening in the insulating layer and the opening exposes the photoelectrode;

forming a third conductive layer to cover the insulating layer and the photoelectrode; and

patterning the third conductive layer so that the third conductive layer patterned covers a part of the insulating layer above the source/drain and connects to one side of the photoelectrode near the source/drain along the opening.

2. The method of claim 1 , wherein the photoresist is resin type black matrix photoresist.

3. The method of claim 1 , wherein the photoresist is phenolic resin, epoxy resin, or acrylic resin.

4. The method of claim 1 , wherein the thickness of the insulating layer is at least 0.5 μm.

5. The method of claim 1 , wherein the thickness of the insulating layer is 0.5-1.6 μm.

6. The method of claim 1 , further comprising forming a protective layer to cover the insulating layer, the third conductive layer and the photoelectrode after patterning the third conductive layer.

7. The method of claim 6 , further comprising patterning the protective layer so that the protective layer patterned covers the third conductive layer and a lighting opening is formed above the diode stack to expose a part of the photoelectrode.

8. The method of claim 1 , wherein the element function layers comprise a first doping layer, an intrinsic semiconductor layer, and a second doping layer.

9. The method of claim 8 , wherein the first doping layer is an n-doped silicon layer and the second doping layer is a p-doped silicon layer.

10. The method of claim 8 , wherein the intrinsic semiconductor layer is an amorphous silicon layer.

11. The method of claim 1 , wherein the electrical property enhancement layer is an n-doped silicon layer.

12. The method of claim 1 , further comprising etching the electrical property enhancement layer to expose a part of the semiconductor layer after patterning the first conductive layer and prior to forming the insulating layer.