Flexible piezoresistive interfacial shear and normal force sensor and sensor array
A force sensor includes a polymeric substrate including a cavity with a tilt plane, at least two metal piezoresistors on the tilt plane, and a contact pad connected to the metal piezoresistors. The tilt plane may include a measured interface of from 15° to 75°.
1. A force sensor, comprising:
a polymeric substrate with a thickness comprising a cavity with a tilt plane at an angle to a measured interface;
at least two metal piezoresistors on said tilt plane; and
a contact pad in electrical contact with said metal piezoresistors; wherein said polymeric substrate and piezoresistors are flexible or deformable, permitting a change in said thickness and in said angle during operation of the force sensor; and wherein said cavity is pyramid-shaped and is filled with a protective material.
2. The force sensor of claim 1 , wherein said angle is from 15° to 75° .
3. The force sensor of claim 1 , wherein said angle is 54.7°.
4. The force sensor of claim 1 , wherein said polymeric substrate comprises polydimethysiloxane, polyimide, latex, vinyl, nitrile, poly(methyl methacrylate), acrylic, Bakelite, neoprene, nylon, polyvinyl chloride, polystyrene, polyacrylonitrile, polyvinyl butyral, epoxy-based materials, or mixtures thereof.
5. The force sensor of claim 1 , wherein said metal piezoresistors independently comprise copper, brass, chromium, aluminum, iron, tin, zinc, indium, iridium, lead, arsenic, cadmium, cobalt, tellurium, tungsten, titanium, silver, gold, palladium, platinum, rhodium, silicon, or mixtures thereof.
6. The force sensor of claim 1 , wherein at least one of said metal piezoresistors comprises a serpentine strain gauge.
7. The force sensor of claim 1 , furthering comprising a layer of protective material on at least a portion of said metal piezoresistors.
8. The force sensor of claim 7 , wherein said protective material comprises polydimethysiloxane, polyimide, latex, vinyl, nitrile, poly(methyl methacrylate), acrylic, Bakelite, neoprene, nylon, polyvinyl chloride, polystyrene, polyacrylonitrile, polyvinyl butyral, epoxy-based materials, or mixtures thereof.
9. A pressure-mapping device, comprising at least two said force sensor of claim 1 , wherein each force sensor is electrically connected to a separate pair of electrodes.
10. The pressure-making device of claim 9 , wherein said device is selected from the group consisting of a diabetic foot sensor, a shoe-fitting sensor, a seat sensor, a wheelchair sensor, a bed mattress sensor, a dental occlusal analyzer, a tire track analyzer, and a prosthetic analyzer.
11. A method of determining a force with the sensor of claim 1 , comprising:
measuring a difference in the change of resistance between said metal piezoresistors, and determining a shear force from said difference.
12. A method of determining a force with the sensor of claim 1 , comprising:
measuring a sum of the change of resistance of said metal piezoresistors, and
determining a normal force from said sum.
13. A method of making a force sensor, comprising:
depositing a first layer of metal on a polymeric substrate to form a first set of metal piezoresistors;
bonding a contact pad on said first layer of metal,
wherein said polymeric substrate comprises a cavity with a tilt plane at an angle to a measured interface, and said first layer of metal is deposited on at least a portion of said tilt plane and said polymeric substrate is flexible or deformable, permitting a change of said angle of said tilt plane during operation of the force sensor; and
filling said cavity with a layer of protective material.
14. The method of claim 13 , wherein said tilt plane comprises an angle to a measured interface of from 15° to 75°.
15. The method of claim 13 , wherein said tilt plane comprises a 54.7° angle to a measured interface.
16. The method of claim 13 , wherein said depositing comprises shadow masking.
17. The method of claim 13 , further comprising forming said polymeric substrate from a negative mold.
18. The method of claim 17 , wherein said negative mold comprises nickel electroplated on a cavity mold.
19. The method of claim 18 , wherein said cavity mold comprises a seed layer.
20. The method of claim 18 , wherein said cavity mold comprises silicon etched with potassium hydroxide.
21. The method of claim 13 , wherein said filling is performed prior to bonding said contact pad on said first layer of metal.
22. The method of claim 21 , further comprising depositing a second layer of metal on said tilt plane to form a second set of metal piezoresistors.
23. The method of claim 22 , wherein said depositing comprises shadow masking.
24. The method of claim 22 , further comprising establishing a connection section between said first and second metal layers, and establishing an isolation section between said first and second metal layers.
25. The method of claim 24 , further comprising coating a layer of protective material, and bonding another contact pad on said second layer of metal.
26. The method of claim 25 , further comprising attaching said contact pads to a flexible printed circuit board.