Method of assembling a silicon stack semiconductor package
View Patent ↗A method of manufacturing a plurality of stacked die semiconductor packages, including: placing a phase change material between a top surface of a substrate and a bottom surface of a first die; placing a phase change material between a top surface of the first die and a bottom surface of a second die; wherein the first and second dies have a plurality of conductive protrusions on the bottom surfaces of the dies; wherein the first die has a plurality of conductive vias extending from its conductive protrusions, through the first die, to the top surface of the first die; wherein the conductive vias of said first die are in alignment with the conductive protrusions of the second die; and heating the dies and the substrate to cause the second die to become electrically interconnected to the first die and the first die to become electrically connected to the substrate.
1. A method of assembling a stacked semiconductor package comprising:
placing a phase change material between a top surface of a substrate and a bottom surface of a first semiconductor die;
placing a phase change material between a top surface of said first semiconductor die and a bottom surface of a second semiconductor die;
wherein said first and second semiconductor dies have a plurality of conductive protrusions on said bottom surfaces of said dies;
wherein said first semiconductor die has a plurality of conductive vias extending from its conductive protrusions, through the first semiconductor die, to the top surface of the first semiconductor die;
wherein said conductive vias of said first semiconductor die are in alignment with the conductive protrusions of the second semiconductor die; and
after placing said phase change materials, heating said semiconductor dies and said substrate to cause said second semiconductor die to become electrically interconnected to said first semiconductor die and said first semiconductor die to become electrically connected to said substrate.
2. The method of claim 1 , wherein said phase change materials evaporate during the heating step.
3. The method of claim 1 , wherein said phase change materials cure during the heating step.
4. The method of claim 1 , wherein said phase change materials are placed at the corners of said first and second semiconductor dies.
5. The method of claim 1 , wherein said phase change materials are placed at outer edges of said first and second semiconductor dies.
6. The method of claim 1 , wherein said phase change material is epoxy.
7. The method of claim 1 , wherein said heating step is a high reflow temperature process.
8. The method of claim 1 , wherein said conductive protrusions are solder bumps.
9. The method of claim 1 , further comprising encapsulating said first and second semiconductor dies and said substrate.
10. The method of claim 1 , further comprising:
prior to said heating step, placing a phase change material between a top surface of said second semiconductor die and a bottom surface of a third semiconductor die;
wherein said second semiconductor die has a plurality of conductive vias extending from its conductive protrusions, through the second semiconductor die, to the top surface of the second semiconductor die;
wherein said third semiconductor die has conductive protrusions on a bottom surface which are in alignment with the conductive vias of the second semiconductor die; and
wherein during said heating step said third semiconductor die becomes electrically interconnected to said second semiconductor die.
11. A method of assembling a stacked semiconductor package comprising:
placing a phase change material between a top surface of a substrate and a bottom surface of a first semiconductor die;
placing a phase change material between a top surface of said first semiconductor die and a bottom surface of a second semiconductor die;
wherein said first and second semiconductor dies have a plurality of conductive protrusions on said bottom surfaces of said dies;
wherein said first semiconductor die has a plurality of conductive vias extending from its conductive protrusions, through the first semiconductor die, to the top surface of the first semiconductor die;
wherein said conductive vias of said first semiconductor die are in alignment with the conductive protrusions of the second semiconductor die; and
heating said semiconductor dies and said substrate to cause said second semiconductor die to become electrically interconnected to said first semiconductor die and said first semiconductor die to become electrically connected to said substrate;
wherein the diameter of said conductive protrusions is reduced during the heating step.
12. The method of claim 11 , wherein said phase change materials cure during the heating step.
13. The method of claim 11 , wherein said phase change materials are placed at the corners of said first and second semiconductor dies.
14. The method of claim 11 , wherein said phase change materials are placed at outer edges of said first and second semiconductor dies.
15. The method of claim 11 , wherein said phase change material is epoxy.
16. The method of claim 11 , wherein said heating step is a high reflow temperature process.
17. The method of claim 11 , wherein said conductive protrusions are solder bumps.
18. The method of claim 11 , further comprising encapsulating said first and second semiconductor dies and said substrate.
19. The method of claim 11 , further comprising:
prior to said heating step, placing a phase change material between a top surface of said second semiconductor die and a bottom surface of a third semiconductor die;
wherein said second semiconductor die has a plurality of conductive vias extending from its conductive protrusions, through the second semiconductor die, to the top surface of the second semiconductor die;
wherein said third semiconductor die has conductive protrusions on a bottom surface which are in alignment with the conductive vias of the second semiconductor die; and
wherein during said heating step said third semiconductor die becomes electrically interconnected to said second semiconductor die.