Active resonant circuit with resonant-frequency tunability
View Patent ↗The present invention is directed to provide a low-power-consumption wide-range RF signal processing unit having a small chip occupation area. A semiconductor integrated circuit has, on a semiconductor chip, a resonant circuit including a first capacitor having a capacitance which can be controlled by a first control signal of a first control terminal, and a gyrator for equivalently emulating an inductor by including a second capacitor having a capacitance which can be controlled by a second control signal of a second control terminal. The capacitance and the inductor form a parallel resonant circuit. At the time of changing parallel resonant frequency, the capacitances of the first and second capacitors are coordinately changed. The parallel resonant circuit is suitable for an active load which is connected to an output node of an amplifier.
1. A semiconductor integrated circuit comprising:
over a semiconductor chip, a resonant circuit including a first capacitor having a variable capacitance controlled by a first control signal applied to a first control terminal, and a gyrator for equivalently emulating an inductor by including a second capacitor having a variable capacitance controlled by a second control signal applied to a second control terminal,
wherein the first capacitor has a first terminal, a second terminal, and a third terminal, the third terminal of the first capacitor is coupled to the first control terminal, the variable capacitance between the first terminal and the second terminal of the first capacitor is controlled by the first control signal applied to the third terminal of the first capacitor,
wherein the second capacitor has a first terminal, a second terminal, and a third terminal, the third terminal of the second capacitor is coupled to the second control terminal, the variable capacitance between the first terminal and the second terminal of the second capacitor is controlled by the second control signal applied to the third terminal of the second capacitor.
2. The semiconductor integrated circuit according to claim 1 ,
wherein, by equivalently connecting the first capacitor and the inductor in parallel, the resonant circuit forms a parallel-resonant circuit, and
wherein, by controlling at least one of the variable capacitance of the first capacitor and the variable capacitance of the second capacitor, a parallel resonant frequency of the parallel-resonant circuit is set to a desired frequency.
3. The semiconductor integrated circuit according to claim 2 ,
wherein at a time of changing the parallel resonant frequency of parallel-resonant circuit to the desired frequency, the variable capacitance of the first capacitor and the variable capacitance of the second capacitor are cooperatively changed using the first and second control signals.
4. The semiconductor integrated circuit according to claim 3 , wherein the parallel-resonant circuit is an active load connected to an output node of an amplifier.
5. The semiconductor integrated circuit according to claim 4 , wherein the amplifier is at least a component which composes one of a low noise amplifier, a voltage controlled oscillator, and a mixer.
6. The semiconductor integrated circuit according to claim 4 , wherein the amplifier processes a signal in two or more frequency bands selected from a frequency range from about 2 GHz to about 14 GHz.
7. The semiconductor integrated circuit according to claim 2 , wherein the gyrator comprises:
a first transconductance circuit for generating current to be supplied to the variable capacitance of the second capacitor in response to voltage of the variable capacitance of the first capacitor at its input terminal; and
a second transconductance circuit for feeding back current responding to the voltage of the variable capacitance of the second capacitor to the input terminal of the first transconductance circuit.
8. The semiconductor integrated circuit according to claim 7 , wherein the first transconductance circuit includes either a common-emitter bipolar transistor whose emitter is connected to an AC ground potential node via a resistor or a common-source field effect transistor whose source is connected to an AC ground potential node via a resistor.
9. The semiconductor integrated circuit according to claim 7 , wherein the second transconductance circuit includes a buffer circuit and a feedback resistor.
10. The semiconductor integrated circuit according to claim 2 , wherein the first and second control signals are digital or analog signals.
11. The semiconductor integrated circuit according to claim 10 , wherein the digital signal is a band selection signal of a plurality of bits for selecting any of a plurality of radio frequency bands for wireless communication.
12. A semiconductor integrated circuit comprising:
over a semiconductor chip, an amplifier and an active load connected to an output node of the amplifier,
wherein the active load comprises
a first capacitor having a variable capacitance controlled by a first control signal applied to a first control terminal; and
a gyrator for equivalently emulating an inductor by including a second capacitor having a variable capacitance controlled by a second control signal applied to a second control terminal,
wherein the first capacitor has a first terminal, a second terminal, and a third terminal, the third terminal of the first capacitor is coupled to the first control terminal, the variable capacitance between the first terminal and the second terminal of the first capacitor is controlled by the first control signal applied to the third terminal of the first capacitor,
wherein the second capacitor has a first terminal, a second terminal, and a third terminal, the third terminal of the second capacitor is coupled to the second control terminal, the variable capacitance between the first terminal and the second terminal of the second capacitor is controlled by the second control signal applied to the third terminal of the second capacitor, and
wherein the first capacitor and the inductor are equivalently connected in parallel in the active load.
13. The semiconductor integrated circuit according to claim 12 , wherein by controlling at least one of the variable capacitance of the first capacitor and the variable capacitance of the second capacitor, a parallel resonant frequency of the active load is set to a desired frequency.
14. The semiconductor integrated circuit according to claim 13 ,
wherein at a time of changing the parallel resonant frequency of the active load to the desired frequency, the variable capacitance of the first capacitor and the variable capacitance of the second capacitor are cooperatively changed using the first and second control signals.
15. The semiconductor integrated circuit according to claim 14 , wherein the amplifier processes a signal in two or more frequency bands selected from a frequency range from about 2 GHz to about 14 GHz.