Semiconductor device with ferro-electric capacitor

1. A semiconductor device, comprising:

a semiconductor substrate;

a semiconductor element formed in said semiconductor substrate;

an insulating film covering said semiconductor element and formed above said semiconductor substrate;

a lower insulating hydrogen diffusion preventive film made of aluminum oxide, having a hydrogen/moisture shielding function, and formed above said insulating film;

a conductive adhesion enhancing film made of at least one material selected from a group consisting of Ti, and TiN, formed on said lower insulating hydrogen diffusion preventive film;

a ferro-electric capacitor including a lower electrode formed above said conductive adhesion enhancing film, a ferro-electric film formed on said lower electrode and being disposed within said lower electrode as viewed in plan, and an upper electrode formed on said ferro-electric film and being disposed within said ferro-electric film as viewed in plan,

wherein said conductive adhesion enhancing film has a function of improving adhesion of said lower electrode of said ferro-electric capacitor and reducing leak current of said ferro-electric capacitor;

a lower conductive plug including W, formed through said insulating film and said lower insulating hydrogen diffusion preventive film and electrically connecting said semiconductor element and said conductive adhesion enhancing film;

a conductive oxygen barrier film made of TiAlN, and formed between said conductive adhesion enhancing film and said lower electrode;

an interlayer insulating film covering said ferro-electric capacitor; and

an upper conductive plug formed through said interlayer insulating film and reaching said upper electrode.

2. The semiconductor device according to claim 1 , wherein said conductive adhesion enhancing film is made of a single Ti layer.

3. The semiconductor device according to claim 2 , wherein a thickness of said conductive adhesion enhancing film is in a range of 1 to 25 nm.

4. The semiconductor device according to claim 1 , wherein said conductive oxygen barrier film has a thickness of 100-200 nm.

5. The semiconductor device according to claim 1 , wherein said lower insulating hydrogen diffusion preventive film has a thickness of 1 to 100 nm.

6. The semiconductor device according to claim 1 , further comprising an upper insulating hydrogen diffusion preventive film formed covering an upper surface and side walls of said ferro-electric capacitor to envelope said ferro-electric capacitor together with said lower insulating hydrogen diffusion preventive film.

7. The semiconductor device according to claim 1 , wherein said ferro-electric film is made of any one of PZT, PZT slightly doped with additive, BLT, SBT and Bi-containing layered compound.

8. The semiconductor device according to claim 1 , wherein said lower electrode is an electrode made of at least one material selected from a group consisting of Pt, Ir, Ru, Rh, Re, Os, Pd, oxide thereof, and SrRuO 3 .