Semiconductor device and method for manufacturing the same
View Patent ↗A semiconductor device having a through electrode excellent in performance as for an electrode and manufacturing stability is provided. There is provided a through electrode composed of a conductive small diameter plug and a conductive large diameter plug on a semiconductor device. A cross sectional area of the small diameter plug is made larger than a cross sectional area and a diameter of a connection plug, and is made smaller than a cross sectional area and a diameter of the large diameter plug. In addition, a protruding portion formed in such a way that the small diameter plug is projected from the silicon substrate is put into an upper face of the large diameter plug. Further, an upper face of the small diameter plug is connected to a first interconnect.
1. A semiconductor device, comprising:
a semiconductor substrate;
an insulating layer provided on a main surface of said semiconductor substrate; and
a through electrode penetrating said semiconductor substrate and connected to a conductive component provided inside said insulating layer;
wherein a cylindrical ring shaped insulating body is disposed on an outer periphery of a side face of said through electrode, and
wherein said through electrode comprises a first conductive plug of a first material connecting with said conductive component, and a second conductive plug of a second material different from the first material, which is provided in said semiconductor substrate, and which has a cross sectional area larger than a cross sectional area of said first conductive plug.
2. The semiconductor device according to claim 1 , wherein said cylindrical ring shaped insulating body includes SiO 2 .
3. The semiconductor device according to claim 1 , wherein said cylindrical ring shaped insulating body includes an SiO 2 layer and an SiN layer.
4. The semiconductor device according to claim 1 , wherein a part of said first conductive plug extends into said second conductive plug.
5. The semiconductor device according to claim 1 , wherein a plurality of said first conductive plugs electrically connect to said single second conductive plug.
6. The semiconductor device according to claim 1 , wherein said second conductive plug being formed from the rear surface of said semiconductor substrate to the vicinity of said main surface of said semiconductor substrate.
7. The semiconductor device according to claim 1 , wherein a part of said first conductive plug is put into said second conductive plug.
8. The semiconductor device according to claim 1 , wherein said second conductive plug is projected from a rear surface of said semiconductor substrate.
9. The semiconductor device according to claim 1 , wherein a cross sectional area of said through electrode in the main face of said semiconductor substrate is smaller than a cross sectional area of said through electrode in a rear surface of said semiconductor substrate.
10. A semiconductor device, comprising:
a semiconductor substrate;
a transistor formed layer provided on a main face of said semiconductor substrate;
an interconnect layer provided on an upper portion of said transistor formed layer;
an upper interconnect layer provided on an upper portion of said interconnect layer;
a through electrode of a first material penetrating said transistor formed layer and said semiconductor substrate;
a conductive plug of a second material different from the first material provided on another face of said semiconductor substrate opposite to said main face; and
a cylindrical ring shaped insulating body is disposed on an outer periphery of a side face of said through electrode,
wherein said through electrode connects an interconnect formed in said interconnect layer and provided in said transistor formed layer, and
said through electrode has a cross sectional area smaller than a cross sectional area of said conductive plug.