IP Library Granted Patent US 7,741,897
Granted Patent B1
US 7,741,897 · App. 12/129,545 · Granted Jun 22, 2010

Method and apparatus for self gate pumped NMOS high speed switch

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Quick Facts
Patent No.
US 7,741,897
App. No.
12/129,545
Granted
Jun 22, 2010
Kind
B1
Abstract

A method and apparatus for self gate pumped NMOS high speed switch have been disclosed.

Claims (12)

1. An apparatus comprising:

a first NMOS transistor having a gate, a source, and a drain, said source capable of being operatively coupled to an input, said drain capable of being operatively coupled to an output;

a first diode having an anode and a cathode, said cathode operatively coupled to said first NMOS transistor gate;

a first PMOS transistor having a gate, a source, and a drain, said source capable of being operatively coupled to a first supply voltage, said drain operatively coupled to said first diode anode;

a second NMOS transistor having a gate, a source, and a drain, said drain capable of being operatively coupled to said first NMOS transistor gate, said source capable of being operatively coupled to a second supply voltage, and said gate operatively coupled to said first PMOS transistor gate;

a second PMOS transistor having a gate, a source, and a drain, said source capable of being operatively coupled to said input, said drain capable of being operatively coupled to said output;

a second diode having an anode and a cathode, said anode operatively coupled to said second PMOS transistor gate;

a third NMOS transistor having a gate, a source, and a drain, said source capable of being operatively coupled to said second supply voltage, said drain operatively coupled to said second diode cathode; and

a third PMOS transistor having a gate, a source, and a drain, said drain capable of being operatively coupled to said second PMOS transistor gate, said source capable of being operatively coupled to said first supply voltage, and said gate operatively coupled to said third NMOS transistor gate.

2. The apparatus of claim 1 further comprising:

a first inverter having an input and an output; said input capable of being operatively coupled to a control input; and said output operatively coupled to said third PMOS gate;

a second inverter having an input and an output, said input operatively coupled to said first inverter output, and said output operatively coupled to said second NMOS gate.

Assignments (3)
RELEASE OF SECURITY INTEREST Recorded Mar 29, 2019
From: JPMORGAN CHASE BANK, N.A.
To: INTEGRATED DEVICE TECHNOLOGY, INC.; GIGPEAK, INC.; CHIPX, INCORPORATED; ENDWAVE CORPORATION; MAGNUM SEMICONDUCTOR, INC.
Reel/Frame 048746/0001 →
SECURITY AGREEMENT Recorded Apr 5, 2017
From: INTEGRATED DEVICE TECHNOLOGY, INC.; GIGPEAK, INC.; MAGNUM SEMICONDUCTOR, INC.; ENDWAVE CORPORATION; CHIPX, INCORPORATED
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 042166/0431 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 29, 2008
From: ISIK, TACETTIN; WENG, SIYOU
To: INTEGRATED DEVICE TECHNOLOGY, INC.
Reel/Frame 021017/0444 →