SEMICONDUCTOR DEVICE WITH STRENGTHENED PADS
A semiconductor device is provided having an increased hardness against contact of a probe needle. The semiconductor device includes: a semiconductor substrate; a semiconductor element formed in the semiconductor substrate; an insulating film formed above the semiconductor substrate and covering the semiconductor element; a multilayer wiring structure formed in the insulating film; and a pad electrode structure connected to the multilayer wiring structure and formed on the insulating film, the pad electrode structure including a conductive adhesion film, a conductive pad electrode formed above the conductive adhesion film, and a conductive hydrogen barrier film formed above the conductive pad electrode.
1 . A semiconductor device comprising:
a semiconductor substrate;
a semiconductor element formed in said semiconductor substrate;
an insulating film formed above said semiconductor substrate and covering said semiconductor element;
multilayer wiring structure formed in said insulating film; and
a pad electrode structure connected to said multilayer wiring structure and formed on said insulating film, said pad electrode structure including a conductive adhesion film, a conductive pad electrode formed above said conductive adhesion film, and a conductive hydrogen barrier film formed above said conductive pad electrode.
2 . The semiconductor device according to claim 1 , wherein said conductive pad electrode includes a layer made of at least one material selected from a group consisting of Ir, Ru, Rh, Re, Os and oxide thereof.
3 . The semiconductor device according to claim 1 , wherein said conductive pad electrode includes a layer made of at least one material selected from a group consisting of Al, Cu, W and alloy thereof.
4 . The semiconductor device according to claim 1 , further comprising a capacitor formed above said semiconductor substrate and including a bottom electrode, a dielectric oxide film and a top electrode, wherein said multilayer wiring structure is disposed above said capacitor.
5 . The semiconductor device according to claim 4 , wherein said dielectric oxide film is a film made of ferro-electric substance represented by a general formula of ABO 3 .
6 . The semiconductor device according to claim 5 , wherein said ferro-electric substance is one of PZT, PZT sightly doped with additive, BLT, SBT and Bi-containing layered compound.
7 . The semiconductor device according to claim 4 , wherein said bottom electrode includes a film made of at least one material selected from a group consisting of Pt, Ir, Ru, Rh, Re, Os, Pd, oxide thereof and SrRuO 3 .
8 . The semiconductor device according to claim 4 , wherein said top electrode includes a film made of at least one material selected from a group consisting of Pt, Ir, Ru, Rh, Re, Os, Pd, oxide thereof and SrRuO 3 .
9 . The semiconductor device according to claim 1 , wherein said conductive hydrogen barrier film includes a layer of one of nitride and oxynitride of Ti, TiAl, Ta and TaAl and mixture thereof or a lamination thereof.
10 . The semiconductor device according to claim 1 , wherein said conductive adhesion film includes at least a film selected from a group consisting of a Ti film, a TiN film, a TiAlN film, an Ir film, an IrO x film, an IrO x film, a Pt film, an Ru film, an RuO x film, an Os film and a Ta film.
11 . The semiconductor device according to claim 2 , wherein said conductive adhesion film is integrated with said conductive pad electrode and is one of an Ir film, an IrO x film, an Ru film, an RuO x film and an Os film.
12 . The semiconductor device according to claim 1 , further comprising a conductive protection film electrically isolated from said pad electrode structure and disposed surrounding said pad electrode structure.
13 . The semiconductor device according to claim 12 , wherein said conductive protection film includes a film of one of Ir, Ru, Rh, Re, Os, oxide thereof and mixture thereof or a lamination thereof.
14 . The semiconductor device according to claim 12 , wherein said conductive protection film has a layer structure same as said pad electrode structure.
15 . The semiconductor device according to claim 12 , wherein said conductive protection film is formed covering a whole surface above said semiconductor substrate, excluding an area corresponding to said pad electrode structure.
16 . The semiconductor device according to claim 1 , further comprising an insulating barrier film disposed in or above said insulating film and including a film made of at least one of aluminum oxide and titanium oxide.
17 . The semiconductor device according to claim 16 , wherein said insulating barrier film is disposed at a height level crossing said multilayer wiring structure, and covers a whole surface of said semiconductor substrate together with said multilayer wiring structure.
18 . The semiconductor device according to claim 17 , wherein said multilayer wiring structure includes via conductors and a wiring pattern, and said insulating barrier film is disposed at a height level crossing said wiring pattern.
19 . The semiconductor device according to claim 17 , wherein said multilayer wiring structure includes via conductors and a wiring pattern, and said insulating barrier film is disposed at a height level crossing said via conductors.
20 . The semiconductor device according to claim 16 , wherein said insulating barrier film is disposed contacting said pad electrode structure.