Semiconductor device and manufacturing method of the semiconductor device
View Patent ↗A semiconductor device includes a dual gate CMOS logic circuit having gate electrodes with different conducting types and a trench capacitor type memory on a same substrate includes a trench of the substrate for the trench capacitor, a dielectric film formed in the trench, a first poly silicon film formed inside of the trench, and a cell plate electrode located above the dielectric film. The cell plate electrode includes a first poly silicon film formed on the dielectric film partially filling the trench, and a second poly silicon film formed on the first poly silicon film to completely fill the trench. The second poly silicon film includes a sufficient film thickness for forming gate electrodes, wherein the impurity concentration of the first poly silicon film is higher than the impurity concentration of the second poly silicon film.
1. A semiconductor device comprising:
a CMOS transistor having gate electrodes with different conducting types on a substrate;
a trench capacitor type memory on a same substrate with the CMOS transistor; and
a trench of the substrate for the trench capacitor including a dielectric film formed in the trench, a first poly silicon film formed inside of the trench, and a cell plate electrode located above the dielectric film;
wherein the cell plate electrode includes the first poly silicon film formed on the dielectric film to not completely fill the trench, and a second poly silicon film formed on the first poly silicon film to completely fill the trench;
wherein the second poly silicon film has a film thickness for forming the gate electrodes and the first poly silicon film;
wherein an impurity concentration of the first poly silicon film in the trench of the cell plate electrode is higher than an impurity concentration of the second poly silicon film filled inside of trench of the cell plate electrode.
2. The semiconductor device as claimed in claim 1 , further comprising:
plural resistor elements having different resistances;
wherein the resistor elements include the first poly silicon film and the second poly silicon film, wherein the different resistances are obtained by combinations of presence or absence of the impurity doped in the first poly silicon film and the presence or absence of the impurity doped in the second poly silicon film.
3. The semiconductor device as claimed in claim 1 , wherein the first poly silicon film of one of the gate electrodes of the CMOS transistor includes a same conducting type of the impurity as the conducting type of the impurity included in the first poly silicon film of the cell plate electrode.
4. The semiconductor device as claimed in claim 1 , wherein the first poly silicon film of one of the gate electrodes of the CMOS transistors includes a conducting type of the impurity included in the first poly silicon film of the cell plate electrode.